STMicroelectronics Type N-Channel MOSFET, 7 A, 650 V Enhancement, 3-Pin TO-263 STB43N65M5
- RS庫存編號:
- 188-8512
- 製造零件編號:
- STB43N65M5
- 製造商:
- STMicroelectronics
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TWD647.00
(不含稅)
TWD679.36
(含稅)
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單位 | 每單位 | 每包* |
|---|---|---|
| 2 - 248 | TWD323.50 | TWD647.00 |
| 250 - 498 | TWD314.50 | TWD629.00 |
| 500 + | TWD309.50 | TWD619.00 |
* 參考價格
- RS庫存編號:
- 188-8512
- 製造零件編號:
- STB43N65M5
- 製造商:
- STMicroelectronics
規格
產品概覽和技術數據資料表
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產品詳細資訊
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選取全部 | 屬性 | 值 |
|---|---|---|
| 品牌 | STMicroelectronics | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 7A | |
| Maximum Drain Source Voltage Vds | 650V | |
| Package Type | TO-263 | |
| Mount Type | Surface | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 630mΩ | |
| Channel Mode | Enhancement | |
| Maximum Gate Source Voltage Vgs | 25 V | |
| Minimum Operating Temperature | -55°C | |
| Typical Gate Charge Qg @ Vgs | 15nC | |
| Forward Voltage Vf | 1.6V | |
| Maximum Power Dissipation Pd | 70W | |
| Maximum Operating Temperature | 150°C | |
| Standards/Approvals | No | |
| Height | 4.37mm | |
| Width | 9.35 mm | |
| Length | 10.4mm | |
| Automotive Standard | AEC-Q101 | |
| 選取全部 | ||
|---|---|---|
品牌 STMicroelectronics | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 7A | ||
Maximum Drain Source Voltage Vds 650V | ||
Package Type TO-263 | ||
Mount Type Surface | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 630mΩ | ||
Channel Mode Enhancement | ||
Maximum Gate Source Voltage Vgs 25 V | ||
Minimum Operating Temperature -55°C | ||
Typical Gate Charge Qg @ Vgs 15nC | ||
Forward Voltage Vf 1.6V | ||
Maximum Power Dissipation Pd 70W | ||
Maximum Operating Temperature 150°C | ||
Standards/Approvals No | ||
Height 4.37mm | ||
Width 9.35 mm | ||
Length 10.4mm | ||
Automotive Standard AEC-Q101 | ||
This device is an N-channel Power MOSFET based on the MDmesh™ M5 innovative vertical process technology combined with the well-known PowerMESH™ horizontal layout. The resulting product offers extremely low on-resistance, making it particularly suitable for applications requiring high power and superior efficiency.
Extremely low RDS(on)
Low gate charge and input capacitance
Excellent switching performance
Applications
Switching applications
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