STMicroelectronics MDmesh M5 Type N-Channel MOSFET, 33 A, 650 V Enhancement, 3-Pin TO-263
- RS庫存編號:
- 103-1994
- 製造零件編號:
- STB42N65M5
- 製造商:
- STMicroelectronics
此圖片僅供參考，請參閲產品詳細資訊及規格
可享批量折扣
小計（1 卷，共 1000 件）*
TWD305,900.00
(不含稅)
TWD321,200.00
(含稅)
訂單超過 $1,300.00 免費送貨
有庫存
- 1,000 件準備從其他地點送貨
**需要更多嗎？**輸入您需要的數量，然後按一下「查看送貨日期」以查詢更多庫存和送貨詳細資訊。
單位 | 每單位 | 每卷* |
|---|---|---|
| 1000 - 4000 | TWD305.90 | TWD305,900.00 |
| 5000 + | TWD299.70 | TWD299,700.00 |
* 參考價格
- RS庫存編號:
- 103-1994
- 製造零件編號:
- STB42N65M5
- 製造商:
- STMicroelectronics
規格
產品概覽和技術數據資料表
法例與合規
產品詳細資訊
透過選取一個或多個屬性來查找類似產品。
選取全部 | 屬性 | 值 |
|---|---|---|
| 品牌 | STMicroelectronics | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 33A | |
| Maximum Drain Source Voltage Vds | 650V | |
| Series | MDmesh M5 | |
| Package Type | TO-263 | |
| Mount Type | Surface | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 79mΩ | |
| Channel Mode | Enhancement | |
| Forward Voltage Vf | 1.2V | |
| Maximum Gate Source Voltage Vgs | 25 V | |
| Typical Gate Charge Qg @ Vgs | 100nC | |
| Minimum Operating Temperature | -55°C | |
| Maximum Power Dissipation Pd | 190W | |
| Maximum Operating Temperature | 150°C | |
| Height | 4.6mm | |
| Standards/Approvals | No | |
| Length | 10.75mm | |
| Width | 10.4 mm | |
| Automotive Standard | No | |
| 選取全部 | ||
|---|---|---|
品牌 STMicroelectronics | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 33A | ||
Maximum Drain Source Voltage Vds 650V | ||
Series MDmesh M5 | ||
Package Type TO-263 | ||
Mount Type Surface | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 79mΩ | ||
Channel Mode Enhancement | ||
Forward Voltage Vf 1.2V | ||
Maximum Gate Source Voltage Vgs 25 V | ||
Typical Gate Charge Qg @ Vgs 100nC | ||
Minimum Operating Temperature -55°C | ||
Maximum Power Dissipation Pd 190W | ||
Maximum Operating Temperature 150°C | ||
Height 4.6mm | ||
Standards/Approvals No | ||
Length 10.75mm | ||
Width 10.4 mm | ||
Automotive Standard No | ||
N-channel MDmesh™ M5 Series, STMicroelectronics
The MDmesh M5 power MOSFETs are optimised for high-power PFC and PWM topologies. Main features include a low on-state losses per silicon area combined with low gate charge. They are designed for energy-conscious, Compact and reliable hard switching applications, such as solar power converters, power supplies for consumer products and electronic lighting controls.
MOSFET Transistors, STMicroelectronics
相關連結
- STMicroelectronics MDmesh M5 Type N-Channel MOSFET 650 V Enhancement, 3-Pin TO-263 STB42N65M5
- STMicroelectronics MDmesh M5 Type N-Channel MOSFET 650 V Enhancement, 3-Pin TO-247
- STMicroelectronics MDmesh M5 Type N-Channel MOSFET 650 V Enhancement, 3-Pin TO-220
- STMicroelectronics MDmesh M5 Type N-Channel MOSFET 650 V Enhancement, 3-Pin TO-220 STP42N65M5
- STMicroelectronics MDmesh M5 Type N-Channel MOSFET 650 V Enhancement, 3-Pin TO-247 STW42N65M5
- STMicroelectronics MDmesh M5 Type N-Channel MDmesh V Power MOSFET 650 V Enhancement, 3-Pin TO-220FP
- STMicroelectronics MDmesh Type N-Channel MOSFET 650 V Enhancement, 3-Pin TO-263
- STMicroelectronics MDmesh M5 Type N-Channel MDmesh V Power MOSFET 650 V Enhancement, 3-Pin TO-220FP STF16N65M5