STMicroelectronics Type N-Channel MOSFET, 4 A, 800 V Enhancement, 3-Pin TO-252
- RS庫存編號:
- 188-8289
- 製造零件編號:
- STD5N80K5
- 製造商:
- STMicroelectronics
此圖片僅供參考，請參閲產品詳細資訊及規格
可享批量折扣
小計（1 卷，共 2500 件）*
TWD80,500.00
(不含稅)
TWD84,525.00
(含稅)
訂單超過 $1,300.00 免費送貨
有庫存
- 2,500 件準備從其他地點送貨
**需要更多嗎？**輸入您需要的數量，然後按一下「查看送貨日期」以查詢更多庫存和送貨詳細資訊。
單位 | 每單位 | 每卷* |
|---|---|---|
| 2500 - 2500 | TWD32.20 | TWD80,500.00 |
| 5000 + | TWD31.20 | TWD78,000.00 |
* 參考價格
- RS庫存編號:
- 188-8289
- 製造零件編號:
- STD5N80K5
- 製造商:
- STMicroelectronics
規格
產品概覽和技術數據資料表
法例與合規
產品詳細資訊
透過選取一個或多個屬性來查找類似產品。
選取全部 | 屬性 | 值 |
|---|---|---|
| 品牌 | STMicroelectronics | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 4A | |
| Maximum Drain Source Voltage Vds | 800V | |
| Package Type | TO-252 | |
| Mount Type | Surface | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 1.73Ω | |
| Channel Mode | Enhancement | |
| Forward Voltage Vf | 1.5V | |
| Maximum Gate Source Voltage Vgs | 30 V | |
| Typical Gate Charge Qg @ Vgs | 5nC | |
| Maximum Power Dissipation Pd | 60W | |
| Minimum Operating Temperature | -55°C | |
| Maximum Operating Temperature | 150°C | |
| Length | 6.6mm | |
| Height | 2.17mm | |
| Standards/Approvals | No | |
| Width | 6.2 mm | |
| Automotive Standard | No | |
| 選取全部 | ||
|---|---|---|
品牌 STMicroelectronics | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 4A | ||
Maximum Drain Source Voltage Vds 800V | ||
Package Type TO-252 | ||
Mount Type Surface | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 1.73Ω | ||
Channel Mode Enhancement | ||
Forward Voltage Vf 1.5V | ||
Maximum Gate Source Voltage Vgs 30 V | ||
Typical Gate Charge Qg @ Vgs 5nC | ||
Maximum Power Dissipation Pd 60W | ||
Minimum Operating Temperature -55°C | ||
Maximum Operating Temperature 150°C | ||
Length 6.6mm | ||
Height 2.17mm | ||
Standards/Approvals No | ||
Width 6.2 mm | ||
Automotive Standard No | ||
This very high voltage N-channel Power MOSFET is designed using MDmesh K5 technology based on an innovative proprietary vertical structure. The result is a dramatic reduction in on-resistance and ultra-low gate charge for applications requiring superior power density and high efficiency.
Industry’s lowest RDS(on) x area
Industry’s best FoM (figure of merit)
Ultra-low gate charge
Zener-protected
Applications
Switching applications
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