製造零件編號

Vishay Common Drain TrenchFET 3 Type P, Type N-Channel MOSFET, 30 A, 200 V Enhancement, 10-Pin Triple Die

RS庫存編號:: 188-5065
製造零件編號:: SQUN702E-T1_GE3
製造商:: Vishay

Vishay Common Drain TrenchFET 3 Type P, Type N-Channel MOSFET, 30 A, 200 V Enhancement, 10-Pin Triple Die

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小計（1 包，共 5 件）*

TWD607.00

(不含稅)

TWD637.35

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單位	每單位	每包*
5 - 495	TWD121.40	TWD607.00
500 - 995	TWD118.60	TWD593.00
1000 +	TWD116.60	TWD583.00

* 參考價格

RS庫存編號:: 188-5065
製造零件編號:: SQUN702E-T1_GE3
製造商:: Vishay

產品概覽和技術數據資料表

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產品詳細資訊

透過選取一個或多個屬性來查找類似產品。

選取全部	屬性	值
	品牌	Vishay
	Channel Type	Type P, Type N
	Product Type	MOSFET
	Maximum Continuous Drain Current Id	30A
	Maximum Drain Source Voltage Vds	200V
	Series	TrenchFET
	Package Type	Triple Die
	Mount Type	Surface
	Pin Count	10
	Channel Mode	Enhancement
	Minimum Operating Temperature	175°C
	Forward Voltage Vf	0.79V
	Typical Gate Charge Qg @ Vgs	23nC
	Maximum Power Dissipation Pd	60W
	Maximum Gate Source Voltage Vgs	20 V
	Maximum Operating Temperature	-55°C
	Transistor Configuration	Common Drain
	Standards/Approvals	No
	Number of Elements per Chip	3
	Automotive Standard	AEC-Q101

	選取全部
	品牌 Vishay
	Channel Type Type P, Type N
	Product Type MOSFET
	Maximum Continuous Drain Current Id 30A
	Maximum Drain Source Voltage Vds 200V
	Series TrenchFET
	Package Type Triple Die
	Mount Type Surface
	Pin Count 10
	Channel Mode Enhancement
	Minimum Operating Temperature 175°C
	Forward Voltage Vf 0.79V
	Typical Gate Charge Qg @ Vgs 23nC
	Maximum Power Dissipation Pd 60W
	Maximum Gate Source Voltage Vgs 20 V
	Maximum Operating Temperature -55°C
	Transistor Configuration Common Drain
	Standards/Approvals No
	Number of Elements per Chip 3
	Automotive Standard AEC-Q101

Datasheet SQUN702E-T1_GE3

Automotive 40 V N- and P-Channel Common Drain MOSFET Pair and 200 V N-Channel MOSFET.

Optimized triple die package

TrenchFET® power MOSFET

Vishay Common Drain TrenchFET 3 Type P, Type N-Channel MOSFET, 30 A, 200 V Enhancement, 10-Pin Triple Die

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