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選取全部	屬性	值
	品牌	onsemi
	Product Type	MOSFET
	Channel Type	Type N
	Maximum Continuous Drain Current Id	252A
	Maximum Drain Source Voltage Vds	40V
	Package Type	LFPAK
	Series	NVMYS1D3N04C
	Mount Type	Surface
	Pin Count	4
	Maximum Drain Source Resistance Rds	1.15mΩ
	Channel Mode	Enhancement
	Minimum Operating Temperature	-55°C
	Maximum Power Dissipation Pd	134W
	Maximum Gate Source Voltage Vgs	20 V
	Typical Gate Charge Qg @ Vgs	75nC
	Maximum Operating Temperature	175°C
	Length	5mm
	Standards/Approvals	No
	Width	4.25 mm
	Height	1.2mm
	Automotive Standard	AEC-Q101

	選取全部
	品牌 onsemi
	Product Type MOSFET
	Channel Type Type N
	Maximum Continuous Drain Current Id 252A
	Maximum Drain Source Voltage Vds 40V
	Package Type LFPAK
	Series NVMYS1D3N04C
	Mount Type Surface
	Pin Count 4
	Maximum Drain Source Resistance Rds 1.15mΩ
	Channel Mode Enhancement
	Minimum Operating Temperature -55°C
	Maximum Power Dissipation Pd 134W
	Maximum Gate Source Voltage Vgs 20 V
	Typical Gate Charge Qg @ Vgs 75nC
	Maximum Operating Temperature 175°C
	Length 5mm
	Standards/Approvals No
	Width 4.25 mm
	Height 1.2mm
	Automotive Standard AEC-Q101

Datasheet NVMYS1D3N04CTWG

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COO (Country of Origin):: PH

Automotive Power MOSFET in a 5x6mm LFPAK package designed for compact and efficient designs and including high thermal performance. MOSFET and PPAP capable suitable for automotive applications requiring enhanced board level reliability.

Small Footprint (5x6 mm) for Compact Design

Low RDS(on) to Minimize Conduction Losses

Low QG and Capacitance to Minimize Driver Losses

LFPAK4 Package, Industry Standard

PPAP Capable

These Devices are Pb−Free

onsemi NVMYS1D3N04C Type N-Channel MOSFET, 252 A, 40 V Enhancement, 4-Pin LFPAK NVMYS1D3N04CTWG

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