Vishay Single Type N-Channel Power MOSFET, 6.8 A, 600 V TO-247AC IRFPC40PBF
- RS庫存編號:
- 180-8337
- 製造零件編號:
- IRFPC40PBF
- 製造商:
- Vishay
此圖片僅供參考,請參閲產品詳細資訊及規格
可享批量折扣
小計(1 管,共 25 件)*
TWD1,357.50
(不含稅)
TWD1,425.50
(含稅)
訂單超過 $1,300.00 免費送貨
有庫存
- 50 件準備從其他地點送貨
**需要更多嗎?**輸入您需要的數量,然後按一下「查看送貨日期」以查詢更多庫存和送貨詳細資訊。
單位 | 每單位 | 每管* |
|---|---|---|
| 25 - 25 | TWD54.30 | TWD1,357.50 |
| 50 - 75 | TWD53.10 | TWD1,327.50 |
| 100 + | TWD51.90 | TWD1,297.50 |
* 參考價格
- RS庫存編號:
- 180-8337
- 製造零件編號:
- IRFPC40PBF
- 製造商:
- Vishay
規格
產品概覽和技術數據資料表
法例與合規
產品詳細資訊
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選取全部 | 屬性 | 值 |
|---|---|---|
| 品牌 | Vishay | |
| Channel Type | Type N | |
| Product Type | Power MOSFET | |
| Maximum Continuous Drain Current Id | 6.8A | |
| Maximum Drain Source Voltage Vds | 600V | |
| Package Type | TO-247AC | |
| Maximum Drain Source Resistance Rds | 1.2Ω | |
| Typical Gate Charge Qg @ Vgs | 60nC | |
| Maximum Gate Source Voltage Vgs | ±20 V | |
| Maximum Power Dissipation Pd | 150W | |
| Minimum Operating Temperature | -55°C | |
| Maximum Operating Temperature | 150°C | |
| Transistor Configuration | Single | |
| Length | 16.25mm | |
| Standards/Approvals | RoHS 2002/95/EC | |
| Width | 15.87 mm | |
| Automotive Standard | No | |
| 選取全部 | ||
|---|---|---|
品牌 Vishay | ||
Channel Type Type N | ||
Product Type Power MOSFET | ||
Maximum Continuous Drain Current Id 6.8A | ||
Maximum Drain Source Voltage Vds 600V | ||
Package Type TO-247AC | ||
Maximum Drain Source Resistance Rds 1.2Ω | ||
Typical Gate Charge Qg @ Vgs 60nC | ||
Maximum Gate Source Voltage Vgs ±20 V | ||
Maximum Power Dissipation Pd 150W | ||
Minimum Operating Temperature -55°C | ||
Maximum Operating Temperature 150°C | ||
Transistor Configuration Single | ||
Length 16.25mm | ||
Standards/Approvals RoHS 2002/95/EC | ||
Width 15.87 mm | ||
Automotive Standard No | ||
- COO (Country of Origin):
- CN
Vishay MOSFET
The Vishay MOSFET is an N-channel, TO-247AC-3 package is a new age product with a drain-source voltage of 600V and maximum gate-source voltage of 20V. It has a drain-source resistance of 1.2ohm at a gate-source voltage of 10V. The MOSFET has a maximum power dissipation of 150W. This product has been optimized for lower switching and conduction losses. The MOSFET offers excellent efficiency along with a long and productive life without compromising performance or functionality.
Features and Benefits
• Dynamic dV/dt rating
• Ease of paralleling
• Fast switching
• Isolated central mounting hole
• Lead (Pb) free component
• Operating temperature ranges between -55°C and 150°
• Repetitive avalanche rated
• Simple drive requirements
Applications
• Battery chargers
• Inverters
• Power supplies
• Switching mode power supply (SMPS)
相關連結
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