Vishay Single 1 Type P-Channel Power MOSFET, -0.4 A, 200 V, 4-Pin HVMDIP IRFD9210PBF
- RS庫存編號:
- 180-8321
- 製造零件編號:
- IRFD9210PBF
- 製造商:
- Vishay
此圖片僅供參考，請參閲產品詳細資訊及規格
可享批量折扣
小計（1 管，共 100 件）*
TWD3,110.00
(不含稅)
TWD3,266.00
(含稅)
訂單超過 $1,300.00 免費送貨
最後的 RS 庫存
- 最終 100 個，準備發貨
單位 | 每單位 | 每管* |
|---|---|---|
| 100 - 100 | TWD31.10 | TWD3,110.00 |
| 200 - 300 | TWD30.40 | TWD3,040.00 |
| 400 + | TWD29.70 | TWD2,970.00 |
* 參考價格
- RS庫存編號:
- 180-8321
- 製造零件編號:
- IRFD9210PBF
- 製造商:
- Vishay
規格
產品概覽和技術數據資料表
法例與合規
產品詳細資訊
透過選取一個或多個屬性來查找類似產品。
選取全部 | 屬性 | 值 |
|---|---|---|
| 品牌 | Vishay | |
| Product Type | Power MOSFET | |
| Channel Type | Type P | |
| Maximum Continuous Drain Current Id | -0.4A | |
| Maximum Drain Source Voltage Vds | 200V | |
| Package Type | HVMDIP | |
| Pin Count | 4 | |
| Maximum Drain Source Resistance Rds | 3Ω | |
| Maximum Gate Source Voltage Vgs | ±20 V | |
| Typical Gate Charge Qg @ Vgs | 8.9nC | |
| Minimum Operating Temperature | -55°C | |
| Maximum Power Dissipation Pd | 1W | |
| Maximum Operating Temperature | 150°C | |
| Transistor Configuration | Single | |
| Standards/Approvals | RoHS 2002/95/EC | |
| Length | 10.79mm | |
| Height | 8.38mm | |
| Width | 5 mm | |
| Number of Elements per Chip | 1 | |
| Automotive Standard | No | |
| 選取全部 | ||
|---|---|---|
品牌 Vishay | ||
Product Type Power MOSFET | ||
Channel Type Type P | ||
Maximum Continuous Drain Current Id -0.4A | ||
Maximum Drain Source Voltage Vds 200V | ||
Package Type HVMDIP | ||
Pin Count 4 | ||
Maximum Drain Source Resistance Rds 3Ω | ||
Maximum Gate Source Voltage Vgs ±20 V | ||
Typical Gate Charge Qg @ Vgs 8.9nC | ||
Minimum Operating Temperature -55°C | ||
Maximum Power Dissipation Pd 1W | ||
Maximum Operating Temperature 150°C | ||
Transistor Configuration Single | ||
Standards/Approvals RoHS 2002/95/EC | ||
Length 10.79mm | ||
Height 8.38mm | ||
Width 5 mm | ||
Number of Elements per Chip 1 | ||
Automotive Standard No | ||
- COO (Country of Origin):
- PH
The Vishay IRFD9210 is a P-channel power MOSFET having drain to source(Vds) voltage of -200V.The gate to source voltage(VGS) is 20V. It is having HVMDIP package. It offers drain to source resistance (RDS.) 3ohms at 10VGS.
Dynamic dV/dt rating
Repetitive avalanche rated
For automatic insertion
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