Vishay Single 1 N-Channel MOSFET, 1.3 A, 100 V Enhancement, 4-Pin HVMDIP IRLD120PBF

品牌

Vishay

Transistor Configuration

Single

Number of Elements per Chip

1

Channel Type

N

Product Type

MOSFET

Maximum Continuous Drain Current (Id)

1.3 A

Maximum Drain Source Voltage (Vds)

100 V

Channel Mode

Enhancement

Pin Count

4

Package Type

HVMDIP

Height

3.37 mm

Length

5 mm

Maximum Drain Source Resistance (Rds)

270 mΩ

Maximum Gate Source Voltage (Vgs)

10 V, -10 V

Maximum Operating Temperature

175 °C

Maximum Power Dissipation (Pd)

1.3 W

Minimum Operating Temperature

-55 °C

Mount Type

Through Hole

Width

6.29 mm