Vishay Single 1 Type P-Channel Power MOSFET, 6.8 A, 100 V TO-263 IRF9520SPBF

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TWD1,530.00

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TWD1,606.50

(含稅)

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  • 2026年10月13日 發貨
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50 - 50TWD30.60TWD1,530.00
100 - 150TWD30.00TWD1,500.00
200 +TWD29.30TWD1,465.00

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RS庫存編號:
180-8308
製造零件編號:
IRF9520SPBF
製造商:
Vishay
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品牌

Vishay

Product Type

Power MOSFET

Channel Type

Type P

Maximum Continuous Drain Current Id

6.8A

Maximum Drain Source Voltage Vds

100V

Package Type

TO-263

Mount Type

Surface

Maximum Drain Source Resistance Rds

0.6Ω

Minimum Operating Temperature

-55°C

Typical Gate Charge Qg @ Vgs

18nC

Maximum Gate Source Voltage Vgs

20 V

Maximum Power Dissipation Pd

60W

Maximum Operating Temperature

175°C

Transistor Configuration

Single

Standards/Approvals

RoHS 2002/95/EC, IEC 61249-2-21

Length

9.65mm

Width

10.67 mm

Number of Elements per Chip

1

Automotive Standard

No

COO (Country of Origin):
CN

Vishay MOSFET


The Vishay MOSFET is an N-channel, TO-263-3 package is a new age product with a drain-source voltage of 100V and maximum gate-source voltage of 20V. It has a drain-source resistance of 600mohm at a gate-source voltage of 10V. The MOSFET has a maximum power dissipation of 60W. This product has been optimized for lower switching and conduction losses. The MOSFET offers excellent efficiency along with a long and productive life without compromising performance or functionality.

Features and Benefits


• Available in tape and reel

• Dynamic dV/dt rating

• Fast switching

• Halogen free

• Lead (Pb) free component

• Operating temperature ranges between -55°C and 175°C

• Repetitive avalanche rated

• TrenchFET power MOSFET

Applications


• Battery chargers

• Inverters

• Power supplies

• Switching mode power supply (SMPS)

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