Vishay Single 1 Type P-Channel Power MOSFET, 6.8 A, 100 V TO-263
- RS庫存編號:
- 180-8684
- 製造零件編號:
- IRF9520SPBF
- 製造商:
- Vishay
此圖片僅供參考，請參閲產品詳細資訊及規格
可享批量折扣
小計（1 包，共 5 件）*
TWD260.00
(不含稅)
TWD273.00
(含稅)
訂單超過 $1,300.00 免費送貨
暫時缺貨
- 從 2026年10月12日 發貨
**需要更多嗎？**輸入您需要的數量，然後按一下「查看送貨日期」以查詢更多庫存和送貨詳細資訊。
單位 | 每單位 | 每包* |
|---|---|---|
| 5 - 10 | TWD52.00 | TWD260.00 |
| 15 - 20 | TWD50.60 | TWD253.00 |
| 25 + | TWD50.00 | TWD250.00 |
* 參考價格
- RS庫存編號:
- 180-8684
- 製造零件編號:
- IRF9520SPBF
- 製造商:
- Vishay
規格
產品概覽和技術數據資料表
法例與合規
產品詳細資訊
透過選取一個或多個屬性來查找類似產品。
選取全部 | 屬性 | 值 |
|---|---|---|
| 品牌 | Vishay | |
| Channel Type | Type P | |
| Product Type | Power MOSFET | |
| Maximum Continuous Drain Current Id | 6.8A | |
| Maximum Drain Source Voltage Vds | 100V | |
| Package Type | TO-263 | |
| Mount Type | Surface | |
| Maximum Drain Source Resistance Rds | 0.6Ω | |
| Minimum Operating Temperature | -55°C | |
| Maximum Power Dissipation Pd | 60W | |
| Typical Gate Charge Qg @ Vgs | 18nC | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Transistor Configuration | Single | |
| Maximum Operating Temperature | 175°C | |
| Length | 9.65mm | |
| Standards/Approvals | RoHS 2002/95/EC, IEC 61249-2-21 | |
| Width | 10.67 mm | |
| Number of Elements per Chip | 1 | |
| Automotive Standard | No | |
| 選取全部 | ||
|---|---|---|
品牌 Vishay | ||
Channel Type Type P | ||
Product Type Power MOSFET | ||
Maximum Continuous Drain Current Id 6.8A | ||
Maximum Drain Source Voltage Vds 100V | ||
Package Type TO-263 | ||
Mount Type Surface | ||
Maximum Drain Source Resistance Rds 0.6Ω | ||
Minimum Operating Temperature -55°C | ||
Maximum Power Dissipation Pd 60W | ||
Typical Gate Charge Qg @ Vgs 18nC | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Transistor Configuration Single | ||
Maximum Operating Temperature 175°C | ||
Length 9.65mm | ||
Standards/Approvals RoHS 2002/95/EC, IEC 61249-2-21 | ||
Width 10.67 mm | ||
Number of Elements per Chip 1 | ||
Automotive Standard No | ||
- COO (Country of Origin):
- CN
Vishay MOSFET
The Vishay MOSFET is an N-channel, TO-263-3 package is a new age product with a drain-source voltage of 100V and maximum gate-source voltage of 20V. It has a drain-source resistance of 600mohm at a gate-source voltage of 10V. The MOSFET has a maximum power dissipation of 60W. This product has been optimized for lower switching and conduction losses. The MOSFET offers excellent efficiency along with a long and productive life without compromising performance or functionality.
Features and Benefits
• Available in tape and reel
• Dynamic dV/dt rating
• Fast switching
• Halogen free
• Lead (Pb) free component
• Operating temperature ranges between -55°C and 175°C
• Repetitive avalanche rated
• TrenchFET power MOSFET
Applications
• Battery chargers
• Inverters
• Power supplies
• Switching mode power supply (SMPS)
相關連結
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