Vishay TrenchFET Type P-Channel MOSFET, 16 A, 12 V Enhancement, 6-Pin MICRO FOOT SI8483DB-T2-E1
- RS庫存編號:
- 180-7932
- 製造零件編號:
- SI8483DB-T2-E1
- 製造商:
- Vishay
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- 從 2027年12月02日 發貨
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|---|---|---|---|
| 25 - 725 | TWD21.20 | TWD530.00 | - |
| 750 - 1475 | TWD20.70 | TWD517.50 | 2% |
| 1500 + | TWD20.30 | TWD507.50 | 4% |
* 參考價格
- RS庫存編號:
- 180-7932
- 製造零件編號:
- SI8483DB-T2-E1
- 製造商:
- Vishay
規格
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產品詳細資訊
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選取全部 | 屬性 | 值 |
|---|---|---|
| 品牌 | Vishay | |
| Channel Type | Type P | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 16A | |
| Maximum Drain Source Voltage Vds | 12V | |
| Package Type | MICRO FOOT | |
| Series | TrenchFET | |
| Mount Type | Surface | |
| Pin Count | 6 | |
| Maximum Drain Source Resistance Rds | 26mΩ | |
| Channel Mode | Enhancement | |
| Minimum Operating Temperature | -55°C | |
| Maximum Gate Source Voltage Vgs | 10V | |
| Forward Voltage Vf | -1.2V | |
| Maximum Power Dissipation Pd | 13W | |
| Typical Gate Charge Qg @ Vgs | 21nC | |
| Maximum Operating Temperature | 150°C | |
| Length | 1.5mm | |
| Standards/Approvals | No | |
| Width | 1mm | |
| Height | 590μm | |
| Automotive Standard | No | |
| 選取全部 | ||
|---|---|---|
品牌 Vishay | ||
Channel Type Type P | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 16A | ||
Maximum Drain Source Voltage Vds 12V | ||
Package Type MICRO FOOT | ||
Series TrenchFET | ||
Mount Type Surface | ||
Pin Count 6 | ||
Maximum Drain Source Resistance Rds 26mΩ | ||
Channel Mode Enhancement | ||
Minimum Operating Temperature -55°C | ||
Maximum Gate Source Voltage Vgs 10V | ||
Forward Voltage Vf -1.2V | ||
Maximum Power Dissipation Pd 13W | ||
Typical Gate Charge Qg @ Vgs 21nC | ||
Maximum Operating Temperature 150°C | ||
Length 1.5mm | ||
Standards/Approvals No | ||
Width 1mm | ||
Height 590μm | ||
Automotive Standard No | ||
- COO (Country of Origin):
- CN
The Vishay Siliconix Si8483DB series TrenchFET dual N channel power MOSFET has drain to source voltage of 12 V. It is maximum power dissipation of 13 W and mainly used in load switch in portable devices.
Low voltage drop
Low power consumption
Increased battery life
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