Vishay SI8818EDB N-Channel Single MOSFETs, 2.2 A, 30 V Enhancement, 4-Pin PowerPAK SI8818EDB-T2-E1
- RS庫存編號:
- 653-090
- 製造零件編號:
- SI8818EDB-T2-E1
- 製造商:
- Vishay
此圖片僅供參考，請參閲產品詳細資訊及規格
小計（1 卷，共 3000 件）*
TWD13,800.00
(不含稅)
TWD14,490.00
(含稅)
訂單超過 $1,300.00 免費送貨
最後的 RS 庫存
- 最終 3,000 個，準備發貨
單位 | 每單位 | 每卷* |
|---|---|---|
| 3000 + | TWD4.60 | TWD13,800.00 |
* 參考價格
替代產品
該產品我們目前不提供。 這是我們推薦的替代產品。
每個 (每批 1 個)
TWD11.00
(不含稅)
TWD11.55
(含稅)
- RS庫存編號:
- 653-090
- 製造零件編號:
- SI8818EDB-T2-E1
- 製造商:
- Vishay
規格
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法例與合規
產品詳細資訊
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選取全部 | 屬性 | 值 |
|---|---|---|
| 品牌 | Vishay | |
| Product Type | Single MOSFETs | |
| Channel Type | N | |
| Maximum Continuous Drain Current Id | 2.2A | |
| Maximum Drain Source Voltage Vds | 30V | |
| Series | SI8818EDB | |
| Package Type | PowerPAK | |
| Mount Type | Surface | |
| Pin Count | 4 | |
| Maximum Drain Source Resistance Rds | 0.143Ω | |
| Channel Mode | Enhancement | |
| Maximum Power Dissipation Pd | 0.9W | |
| Minimum Operating Temperature | -55°C | |
| Maximum Gate Source Voltage Vgs | 12V | |
| Typical Gate Charge Qg @ Vgs | 2.4nC | |
| Maximum Operating Temperature | 150°C | |
| Length | 800μm | |
| Standards/Approvals | No | |
| Width | 800μm | |
| Height | 390μm | |
| Automotive Standard | No | |
| 選取全部 | ||
|---|---|---|
品牌 Vishay | ||
Product Type Single MOSFETs | ||
Channel Type N | ||
Maximum Continuous Drain Current Id 2.2A | ||
Maximum Drain Source Voltage Vds 30V | ||
Series SI8818EDB | ||
Package Type PowerPAK | ||
Mount Type Surface | ||
Pin Count 4 | ||
Maximum Drain Source Resistance Rds 0.143Ω | ||
Channel Mode Enhancement | ||
Maximum Power Dissipation Pd 0.9W | ||
Minimum Operating Temperature -55°C | ||
Maximum Gate Source Voltage Vgs 12V | ||
Typical Gate Charge Qg @ Vgs 2.4nC | ||
Maximum Operating Temperature 150°C | ||
Length 800μm | ||
Standards/Approvals No | ||
Width 800μm | ||
Height 390μm | ||
Automotive Standard No | ||
- COO (Country of Origin):
- CN
The Vishay N-channel MOSFET designed for ultra-compact, high-efficiency switching in space-constrained systems. It supports up to 30 V drain-source voltage. Packaged in MICRO FOOT 0.8 mm x 0.8 mm, it utilizes TrenchFET technology to deliver low RDS(on), fast switching, and excellent thermal performance.
Pb Free
Halogen free
RoHS compliant
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