Vishay SI8802DB N-Channel MOSFET, 3.5 A, 8 V Enhancement, 4-Pin MICRO FOOT SI8802DB-T2-E1
- RS庫存編號:
- 180-7328
- 製造零件編號:
- SI8802DB-T2-E1
- 製造商:
- Vishay
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額外添加15000件可節省TWD3,000.00
查看批量定價選項小計（1 卷，共 3000 件）*
TWD19,800.00
(不含稅)
TWD20,790.00
(含稅)
訂單超過 $1,300.00 免費送貨
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- 從 2027年12月02日 發貨
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單位 | 每單位 | 每卷* | 節省 |
|---|---|---|---|
| 3000 - 12000 | TWD6.60 | TWD19,800.00 | - |
| 15000 + | TWD6.40 | TWD19,200.00 | TWD3,000.00 |
* 參考價格
- RS庫存編號:
- 180-7328
- 製造零件編號:
- SI8802DB-T2-E1
- 製造商:
- Vishay
規格
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產品詳細資訊
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選取全部 | 屬性 | 值 |
|---|---|---|
| 品牌 | Vishay | |
| Product Type | MOSFET | |
| Channel Type | N | |
| Maximum Continuous Drain Current Id | 3.5A | |
| Maximum Drain Source Voltage Vds | 8V | |
| Series | SI8802DB | |
| Package Type | MICRO FOOT | |
| Mount Type | Surface | |
| Pin Count | 4 | |
| Maximum Drain Source Resistance Rds | 54mΩ | |
| Channel Mode | Enhancement | |
| Forward Voltage Vf | 1.2V | |
| Minimum Operating Temperature | -55°C | |
| Maximum Power Dissipation Pd | 0.6W | |
| Maximum Gate Source Voltage Vgs | 5V | |
| Typical Gate Charge Qg @ Vgs | 4.3nC | |
| Maximum Operating Temperature | 150°C | |
| Width | 800μm | |
| Length | 800μm | |
| Standards/Approvals | RoHS | |
| Automotive Standard | No | |
| 選取全部 | ||
|---|---|---|
品牌 Vishay | ||
Product Type MOSFET | ||
Channel Type N | ||
Maximum Continuous Drain Current Id 3.5A | ||
Maximum Drain Source Voltage Vds 8V | ||
Series SI8802DB | ||
Package Type MICRO FOOT | ||
Mount Type Surface | ||
Pin Count 4 | ||
Maximum Drain Source Resistance Rds 54mΩ | ||
Channel Mode Enhancement | ||
Forward Voltage Vf 1.2V | ||
Minimum Operating Temperature -55°C | ||
Maximum Power Dissipation Pd 0.6W | ||
Maximum Gate Source Voltage Vgs 5V | ||
Typical Gate Charge Qg @ Vgs 4.3nC | ||
Maximum Operating Temperature 150°C | ||
Width 800μm | ||
Length 800μm | ||
Standards/Approvals RoHS | ||
Automotive Standard No | ||
Vishay SI8802DB Series MOSFET, 3.5A Maximum Continuous Drain Current, 8V Maximum Drain Source Voltage - SI8802DB-T2-E1
This n-channel enhancement MOSFET is designed for low-voltage switching and power-management tasks in compact surface-mount assemblies. It operates across a wide temperature range and is suited to designs requiring a small footprint and moderate continuous current capability. The device conforms to RoHS requirements and is supplied in a very compact micro package for high-density board layouts.
Features and Benefits:
• 54mΩ on-resistance reduces conduction losses and heat generation
• 8V drain-source rating enables low-voltage power stages
• 3.5A continuous drain current supports moderate load currents
• 4.3nC typical gate charge permits faster switching transitions
• 0.6W maximum power dissipation limits thermal stress under load
• -55°C to 150°C operating temperature range ensures wide thermal tolerance
• 8V drain-source rating enables low-voltage power stages
• 3.5A continuous drain current supports moderate load currents
• 4.3nC typical gate charge permits faster switching transitions
• 0.6W maximum power dissipation limits thermal stress under load
• -55°C to 150°C operating temperature range ensures wide thermal tolerance
Applications
• Suitable for battery-powered low-voltage DC power switching
• Ideal for compact power-management modules on small PCBs
• Used with motor-driver stages requiring fast switching
• Can be used for portable device power-rail switching
• Used for load switching in dense surface-mount assemblies
• Ideal for compact power-management modules on small PCBs
• Used with motor-driver stages requiring fast switching
• Can be used for portable device power-rail switching
• Used for load switching in dense surface-mount assemblies
What pin count and mounting style does it use?
It is supplied as a four-pin device intended for surface-mount assembly in a micro-footprint package.
How does its thermal performance constrain PCB design?
With a 0.6W maximum dissipation and a small package, adequate copper area or thermal vias are recommended to spread heat and prevent localised temperature rise.
What gating considerations are advised for fast switching?
The typical gate charge of 4.3nC at the specified gate voltage necessitates driver stages capable of sourcing and sinking sufficient current to achieve the desired edge rates.
What voltage limits must be respected for safe operation?
The device must not exceed an 8V drain-source differential and a 5V gate-source amplitude to remain within specified electrical limits.
相關連結
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