Vishay Dual TrenchFET 2 Type N-Channel MOSFET, 19.8 A, 20 V Enhancement, 8-Pin SO-8
- RS庫存編號:
- 180-7285
- 製造零件編號:
- SI4204DY-T1-GE3
- 製造商:
- Vishay
此圖片僅供參考,請參閲產品詳細資訊及規格
可享批量折扣
小計(1 卷,共 2500 件)*
TWD90,500.00
(不含稅)
TWD95,025.00
(含稅)
訂單超過 $1,300.00 免費送貨
暫時缺貨
- 從 2026年9月07日 發貨
**需要更多嗎?**輸入您需要的數量,然後按一下「查看送貨日期」以查詢更多庫存和送貨詳細資訊。
單位 | 每單位 | 每卷* |
|---|---|---|
| 2500 - 10000 | TWD36.20 | TWD90,500.00 |
| 12500 + | TWD35.10 | TWD87,750.00 |
* 參考價格
- RS庫存編號:
- 180-7285
- 製造零件編號:
- SI4204DY-T1-GE3
- 製造商:
- Vishay
規格
產品概覽和技術數據資料表
法例與合規
產品詳細資訊
透過選取一個或多個屬性來查找類似產品。
選取全部 | 屬性 | 值 |
|---|---|---|
| 品牌 | Vishay | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 19.8A | |
| Maximum Drain Source Voltage Vds | 20V | |
| Series | TrenchFET | |
| Package Type | SO-8 | |
| Mount Type | Surface | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance Rds | 0.006Ω | |
| Channel Mode | Enhancement | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Maximum Power Dissipation Pd | 3.25W | |
| Minimum Operating Temperature | -55°C | |
| Typical Gate Charge Qg @ Vgs | 30nC | |
| Transistor Configuration | Dual | |
| Maximum Operating Temperature | 150°C | |
| Length | 3.05mm | |
| Standards/Approvals | No | |
| Width | 1.65 mm | |
| Height | 1mm | |
| Number of Elements per Chip | 2 | |
| Automotive Standard | No | |
| 選取全部 | ||
|---|---|---|
品牌 Vishay | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 19.8A | ||
Maximum Drain Source Voltage Vds 20V | ||
Series TrenchFET | ||
Package Type SO-8 | ||
Mount Type Surface | ||
Pin Count 8 | ||
Maximum Drain Source Resistance Rds 0.006Ω | ||
Channel Mode Enhancement | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Maximum Power Dissipation Pd 3.25W | ||
Minimum Operating Temperature -55°C | ||
Typical Gate Charge Qg @ Vgs 30nC | ||
Transistor Configuration Dual | ||
Maximum Operating Temperature 150°C | ||
Length 3.05mm | ||
Standards/Approvals No | ||
Width 1.65 mm | ||
Height 1mm | ||
Number of Elements per Chip 2 | ||
Automotive Standard No | ||
- COO (Country of Origin):
- CN
Vishay MOSFET
The Vishay surface mount dual N-channel MOSFET is a new age product with a drain-source voltage of 20V. It also has drain-source resistance of 4.6mohm at a gate-source voltage of 10V. It has continuous drain current of 19.8A. The MOSFET has a maximum power rating of 3.25W. It has been optimized for lower switching and conduction losses. The MOSFET offers excellent efficiency along with a long and productive life without compromising performance or functionality.
Features and Benefits
• Halogen free
• Lead (Pb) free
• Operating temperature ranges between -55°C and 150°C
• TrenchFET power MOSFET
Applications
• DC/DC Converter
• Fixed Telecommunication
• Notebook PC
Certifications
• ANSI/ESD S20.20:2014
• BS EN 61340-5-1:2007
• IEC 61249-2-21
• Rg tested
• UIS tested
相關連結
- Vishay Dual TrenchFET 2 Type N-Channel MOSFET 20 V Enhancement, 8-Pin SO-8 SI4204DY-T1-GE3
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- Vishay TrenchFET Type N-Channel MOSFET 30 V Enhancement, 8-Pin SO-8
- Vishay TrenchFET Type N-Channel MOSFET 30 V Enhancement, 8-Pin SO-8
- Vishay TrenchFET Type P-Channel MOSFET 30 V Enhancement, 8-Pin SO-8
- Vishay TrenchFET Type P-Channel MOSFET 30 V Enhancement, 8-Pin SO-8
- Vishay TrenchFET Type P-Channel MOSFET 30 V Enhancement, 8-Pin SO-8
