Vishay Dual TrenchFET 2 Type N-Channel MOSFET, 19.8 A, 20 V Enhancement, 8-Pin SO-8

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RS庫存編號:
180-7285
製造零件編號:
SI4204DY-T1-GE3
製造商:
Vishay
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品牌

Vishay

Channel Type

Type N

Product Type

MOSFET

Maximum Continuous Drain Current Id

19.8A

Maximum Drain Source Voltage Vds

20V

Series

TrenchFET

Package Type

SO-8

Mount Type

Surface

Pin Count

8

Maximum Drain Source Resistance Rds

0.006Ω

Channel Mode

Enhancement

Maximum Gate Source Voltage Vgs

20 V

Maximum Power Dissipation Pd

3.25W

Minimum Operating Temperature

-55°C

Typical Gate Charge Qg @ Vgs

30nC

Transistor Configuration

Dual

Maximum Operating Temperature

150°C

Length

3.05mm

Standards/Approvals

No

Width

1.65 mm

Height

1mm

Number of Elements per Chip

2

Automotive Standard

No

COO (Country of Origin):
CN

Vishay MOSFET


The Vishay surface mount dual N-channel MOSFET is a new age product with a drain-source voltage of 20V. It also has drain-source resistance of 4.6mohm at a gate-source voltage of 10V. It has continuous drain current of 19.8A. The MOSFET has a maximum power rating of 3.25W. It has been optimized for lower switching and conduction losses. The MOSFET offers excellent efficiency along with a long and productive life without compromising performance or functionality.

Features and Benefits


• Halogen free

• Lead (Pb) free

• Operating temperature ranges between -55°C and 150°C

• TrenchFET power MOSFET

Applications


• DC/DC Converter

• Fixed Telecommunication

• Notebook PC

Certifications


• ANSI/ESD S20.20:2014

• BS EN 61340-5-1:2007

• IEC 61249-2-21

• Rg tested

• UIS tested

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