onsemi FDD Type N-Channel MOSFET, 50 A, 150 V Enhancement, 3-Pin TO-252 FDD86250-F085
- RS庫存編號:
- 178-4442
- 製造零件編號:
- FDD86250-F085
- 製造商:
- onsemi
此圖片僅供參考，請參閲產品詳細資訊及規格
可享批量折扣
小計（1 包，共 10 件）*
TWD506.00
(不含稅)
TWD531.30
(含稅)
訂單超過 $1,300.00 免費送貨
暫時缺貨
- 5,880 件從 2026年1月23日 起裝運發貨
**需要更多嗎？**輸入您需要的數量，然後按一下「查看送貨日期」以查詢更多庫存和送貨詳細資訊。
單位 | 每單位 | 每包* |
|---|---|---|
| 10 - 620 | TWD50.60 | TWD506.00 |
| 630 - 1240 | TWD49.40 | TWD494.00 |
| 1250 + | TWD48.50 | TWD485.00 |
* 參考價格
- RS庫存編號:
- 178-4442
- 製造零件編號:
- FDD86250-F085
- 製造商:
- onsemi
規格
產品概覽和技術數據資料表
法例與合規
產品詳細資訊
透過選取一個或多個屬性來查找類似產品。
選取全部 | 屬性 | 值 |
|---|---|---|
| 品牌 | onsemi | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 50A | |
| Maximum Drain Source Voltage Vds | 150V | |
| Package Type | TO-252 | |
| Series | FDD | |
| Mount Type | Surface | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 22mΩ | |
| Channel Mode | Enhancement | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Minimum Operating Temperature | -55°C | |
| Typical Gate Charge Qg @ Vgs | 28nC | |
| Maximum Power Dissipation Pd | 160W | |
| Forward Voltage Vf | 1.25V | |
| Maximum Operating Temperature | 175°C | |
| Width | 6.22 mm | |
| Height | 2.39mm | |
| Length | 6.73mm | |
| Standards/Approvals | No | |
| Automotive Standard | AEC-Q101 | |
| 選取全部 | ||
|---|---|---|
品牌 onsemi | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 50A | ||
Maximum Drain Source Voltage Vds 150V | ||
Package Type TO-252 | ||
Series FDD | ||
Mount Type Surface | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 22mΩ | ||
Channel Mode Enhancement | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Minimum Operating Temperature -55°C | ||
Typical Gate Charge Qg @ Vgs 28nC | ||
Maximum Power Dissipation Pd 160W | ||
Forward Voltage Vf 1.25V | ||
Maximum Operating Temperature 175°C | ||
Width 6.22 mm | ||
Height 2.39mm | ||
Length 6.73mm | ||
Standards/Approvals No | ||
Automotive Standard AEC-Q101 | ||
- COO (Country of Origin):
- PH
N-Channel Shielded Gate PowerTrench® MOSFET 150 V, 50 A, 22 mΩ
Typical RDS(on) = 19.4 mΩ at VGS = 10V, ID = 20 A
Typical Qg(tot) = 28 nC at VGS = 10V, ID = 40 A
UIS Capability
Applications:
Automotive Engine Control
PowerTrain Management
Solenoid and Motor Drivers
Distributed Power Architectures and VRM
Primary Switch for 12V Systems
End Products:
Integrated Starter/Alternator
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