onsemi FDD Type N-Channel MOSFET, 50 A, 150 V Enhancement, 3-Pin TO-252

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TWD81,750.00

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TWD85,850.00

(含稅)

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2500 - 10000TWD32.70TWD81,750.00
12500 +TWD31.70TWD79,250.00

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RS庫存編號:
178-4231
製造零件編號:
FDD86250-F085
製造商:
onsemi
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品牌

onsemi

Channel Type

Type N

Product Type

MOSFET

Maximum Continuous Drain Current Id

50A

Maximum Drain Source Voltage Vds

150V

Package Type

TO-252

Series

FDD

Mount Type

Surface

Pin Count

3

Maximum Drain Source Resistance Rds

22mΩ

Channel Mode

Enhancement

Maximum Gate Source Voltage Vgs

20 V

Maximum Power Dissipation Pd

160W

Forward Voltage Vf

1.25V

Typical Gate Charge Qg @ Vgs

28nC

Minimum Operating Temperature

-55°C

Maximum Operating Temperature

175°C

Height

2.39mm

Length

6.73mm

Standards/Approvals

No

Width

6.22 mm

Automotive Standard

AEC-Q101

COO (Country of Origin):
PH
N-Channel Shielded Gate PowerTrench® MOSFET 150 V, 50 A, 22 mΩ

Typical RDS(on) = 19.4 mΩ at VGS = 10V, ID = 20 A

Typical Qg(tot) = 28 nC at VGS = 10V, ID = 40 A

UIS Capability

Applications:

Automotive Engine Control

PowerTrain Management

Solenoid and Motor Drivers

Distributed Power Architectures and VRM

Primary Switch for 12V Systems

End Products:

Integrated Starter/Alternator

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