onsemi NTTFS6H850N Type N-Channel MOSFET, 68 A, 80 V Enhancement, 8-Pin WDFN NTTFS6H850NTAG
- RS庫存編號:
- 178-4439
- 製造零件編號:
- NTTFS6H850NTAG
- 製造商:
- onsemi
此圖片僅供參考，請參閲產品詳細資訊及規格
可享批量折扣
小計（1 包，共 10 件）*
TWD227.00
(不含稅)
TWD238.40
(含稅)
訂單超過 $1,300.00 免費送貨
供應短缺
- 180 件準備從其他地點送貨
我們目前的可售庫存有限，並且我們的供應商預計會出現供應短缺的狀況。
單位 | 每單位 | 每包* |
|---|---|---|
| 10 - 370 | TWD22.70 | TWD227.00 |
| 380 - 740 | TWD22.20 | TWD222.00 |
| 750 + | TWD21.70 | TWD217.00 |
* 參考價格
- RS庫存編號:
- 178-4439
- 製造零件編號:
- NTTFS6H850NTAG
- 製造商:
- onsemi
規格
產品概覽和技術數據資料表
法例與合規
產品詳細資訊
透過選取一個或多個屬性來查找類似產品。
選取全部 | 屬性 | 值 |
|---|---|---|
| 品牌 | onsemi | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 68A | |
| Maximum Drain Source Voltage Vds | 80V | |
| Package Type | WDFN | |
| Series | NTTFS6H850N | |
| Mount Type | Surface | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance Rds | 9.5mΩ | |
| Channel Mode | Enhancement | |
| Maximum Power Dissipation Pd | 107W | |
| Minimum Operating Temperature | -55°C | |
| Typical Gate Charge Qg @ Vgs | 3.6nC | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Forward Voltage Vf | 1.2V | |
| Maximum Operating Temperature | 175°C | |
| Length | 3.15mm | |
| Height | 0.75mm | |
| Width | 3.15 mm | |
| Standards/Approvals | No | |
| Automotive Standard | No | |
| 選取全部 | ||
|---|---|---|
品牌 onsemi | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 68A | ||
Maximum Drain Source Voltage Vds 80V | ||
Package Type WDFN | ||
Series NTTFS6H850N | ||
Mount Type Surface | ||
Pin Count 8 | ||
Maximum Drain Source Resistance Rds 9.5mΩ | ||
Channel Mode Enhancement | ||
Maximum Power Dissipation Pd 107W | ||
Minimum Operating Temperature -55°C | ||
Typical Gate Charge Qg @ Vgs 3.6nC | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Forward Voltage Vf 1.2V | ||
Maximum Operating Temperature 175°C | ||
Length 3.15mm | ||
Height 0.75mm | ||
Width 3.15 mm | ||
Standards/Approvals No | ||
Automotive Standard No | ||
- COO (Country of Origin):
- MY
Commercial Power MOSFET in a 3x3mm flat lead package designed for compact and efficient designs and including high thermal performance.
Features
Low On-Resistance
Low Gate Charge
Small Footprint (3x3 mm)
Benefits
Minimizes Conduction Losses
Minimizes Switching Losses
Compact Design
Applications
Reverser Battery protection
Power switches (High Side Driver, Low Side Driver, H-Bridges etc.)
Synchronous Rectification
End Products
Motor Control
Battery management
Switching Power supplies
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