onsemi UltraFET Type N-Channel MOSFET, 48 A, 80 V Enhancement, 8-Pin WDFN
- RS庫存編號:
- 166-3289
- 製造零件編號:
- FDMS3572
- 製造商:
- onsemi
此圖片僅供參考，請參閲產品詳細資訊及規格
可享批量折扣
小計（1 卷，共 3000 件）*
TWD125,700.00
(不含稅)
TWD132,000.00
(含稅)
訂單超過 $1,300.00 免費送貨
暫時缺貨
- 從 2026年8月11日 發貨
**需要更多嗎？**輸入您需要的數量，然後按一下「查看送貨日期」以查詢更多庫存和送貨詳細資訊。
單位 | 每單位 | 每卷* |
|---|---|---|
| 3000 - 12000 | TWD41.90 | TWD125,700.00 |
| 15000 + | TWD39.90 | TWD119,700.00 |
* 參考價格
- RS庫存編號:
- 166-3289
- 製造零件編號:
- FDMS3572
- 製造商:
- onsemi
規格
產品概覽和技術數據資料表
法例與合規
產品詳細資訊
透過選取一個或多個屬性來查找類似產品。
選取全部 | 屬性 | 值 |
|---|---|---|
| 品牌 | onsemi | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 48A | |
| Maximum Drain Source Voltage Vds | 80V | |
| Package Type | WDFN | |
| Series | UltraFET | |
| Mount Type | Surface | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance Rds | 29mΩ | |
| Channel Mode | Enhancement | |
| Typical Gate Charge Qg @ Vgs | 28nC | |
| Minimum Operating Temperature | -55°C | |
| Maximum Power Dissipation Pd | 78W | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Forward Voltage Vf | 0.8V | |
| Maximum Operating Temperature | 150°C | |
| Length | 5mm | |
| Height | 0.75mm | |
| Width | 6 mm | |
| Standards/Approvals | No | |
| Automotive Standard | No | |
| 選取全部 | ||
|---|---|---|
品牌 onsemi | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 48A | ||
Maximum Drain Source Voltage Vds 80V | ||
Package Type WDFN | ||
Series UltraFET | ||
Mount Type Surface | ||
Pin Count 8 | ||
Maximum Drain Source Resistance Rds 29mΩ | ||
Channel Mode Enhancement | ||
Typical Gate Charge Qg @ Vgs 28nC | ||
Minimum Operating Temperature -55°C | ||
Maximum Power Dissipation Pd 78W | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Forward Voltage Vf 0.8V | ||
Maximum Operating Temperature 150°C | ||
Length 5mm | ||
Height 0.75mm | ||
Width 6 mm | ||
Standards/Approvals No | ||
Automotive Standard No | ||
UltraFET® MOSFET, Fairchild Semiconductor
UItraFET® Trench MOSFET combine characteristics that enable Benchmark efficiency in power conversion applications. The device is capable of withstanding high energy in the avalanche mode, and the diode exhibits very low reverse recovery time and stored charge. Optimised for efficiency at high frequencies, lowest RDS(on), low ESR, and low total and Miller gate charge.
Applications in high frequency DC to DC converters, switching regulators, motor drivers, low-voltage bus switches, and power management.
MOSFET Transistors, ON Semi
ON Semi offers a substantial portfolio of MOSFET devices that includes high-voltage (>250V) and low-voltage (<250V) types. The Advanced silicon technology provides smaller die sizes, which it is incorporated into multiple industry-standard and thermally-enhanced packages.
ON Semi MOSFETs provide superior design reliability from reduced voltage spikes and overshoot, to lower junction capacitance and reverse recovery charge, to elimination of additional external components to keep systems up and running longer.
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