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選取全部	屬性	值
	品牌	onsemi
	Channel Type	Type N
	Product Type	MOSFET
	Maximum Continuous Drain Current Id	68A
	Maximum Drain Source Voltage Vds	80V
	Package Type	WDFN
	Series	NVTFS6H850N
	Mount Type	Surface
	Pin Count	8
	Maximum Drain Source Resistance Rds	9.5mΩ
	Channel Mode	Enhancement
	Minimum Operating Temperature	-55°C
	Typical Gate Charge Qg @ Vgs	19nC
	Maximum Power Dissipation Pd	107W
	Maximum Gate Source Voltage Vgs	20 V
	Forward Voltage Vf	0.8V
	Maximum Operating Temperature	175°C
	Standards/Approvals	No
	Height	0.75mm
	Width	3.15 mm
	Length	3.15mm
	Automotive Standard	AEC-Q101

	選取全部
	品牌 onsemi
	Channel Type Type N
	Product Type MOSFET
	Maximum Continuous Drain Current Id 68A
	Maximum Drain Source Voltage Vds 80V
	Package Type WDFN
	Series NVTFS6H850N
	Mount Type Surface
	Pin Count 8
	Maximum Drain Source Resistance Rds 9.5mΩ
	Channel Mode Enhancement
	Minimum Operating Temperature -55°C
	Typical Gate Charge Qg @ Vgs 19nC
	Maximum Power Dissipation Pd 107W
	Maximum Gate Source Voltage Vgs 20 V
	Forward Voltage Vf 0.8V
	Maximum Operating Temperature 175°C
	Standards/Approvals No
	Height 0.75mm
	Width 3.15 mm
	Length 3.15mm
	Automotive Standard AEC-Q101

Automotive Power MOSFET in a 5x6mm flat lead package designed for compact and efficient designs and including high thermal performance. Wettable Flank Option available for Enhanced Optical Inspection. MOSFET and PPAP capable suitable for automotive applications.

Small Footprint (5x6 mm)

Compact Design

Low rDS(on)

Minimize Conduction Loss

Low QG and Capacitance

Minimize Driver Losses

NVMFD5C446NLWF − Wettable Flank Option

Enhanced Optical Inspection

PPAP Capable

Applications

Solenoid driver

Low side / high side driver

Automotive engine controllers

Antilock braking systems

onsemi NVTFS6H850N Type N-Channel MOSFET, 68 A, 80 V Enhancement, 8-Pin WDFN NVTFS6H850NTAG

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