onsemi NTHL Type N-Channel MOSFET, 30 A, 650 V Enhancement, 3-Pin TO-247

RS庫存編號:: 178-4256
製造零件編號:: NTHL110N65S3F
製造商:: onsemi

onsemi NTHL Type N-Channel MOSFET, 30 A, 650 V Enhancement, 3-Pin TO-247

此圖片僅供參考，請參閲產品詳細資訊及規格

可享批量折扣

小計（1 管，共 30 件）*

TWD4,290.00

(不含稅)

TWD4,504.50

訂單超過 $1,300.00 免費送貨

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單位	每單位	每管*
30 - 30	TWD143.00	TWD4,290.00
60 - 90	TWD140.20	TWD4,206.00
120 +	TWD137.40	TWD4,122.00

* 參考價格

RS庫存編號:: 178-4256
製造零件編號:: NTHL110N65S3F
製造商:: onsemi

規格

產品概覽和技術數據資料表

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產品詳細資訊

透過選取一個或多個屬性來查找類似產品。

選取全部	屬性	值
	品牌	onsemi
	Product Type	MOSFET
	Channel Type	Type N
	Maximum Continuous Drain Current Id	30A
	Maximum Drain Source Voltage Vds	650V
	Package Type	TO-247
	Series	NTHL
	Mount Type	Through Hole
	Pin Count	3
	Maximum Drain Source Resistance Rds	110mΩ
	Channel Mode	Enhancement
	Typical Gate Charge Qg @ Vgs	58nC
	Minimum Operating Temperature	-55°C
	Maximum Power Dissipation Pd	240W
	Maximum Gate Source Voltage Vgs	30 V
	Forward Voltage Vf	1.3V
	Maximum Operating Temperature	150°C
	Height	20.82mm
	Standards/Approvals	No
	Width	4.82 mm
	Length	15.87mm
	Automotive Standard	No

	選取全部
	品牌 onsemi
	Product Type MOSFET
	Channel Type Type N
	Maximum Continuous Drain Current Id 30A
	Maximum Drain Source Voltage Vds 650V
	Package Type TO-247
	Series NTHL
	Mount Type Through Hole
	Pin Count 3
	Maximum Drain Source Resistance Rds 110mΩ
	Channel Mode Enhancement
	Typical Gate Charge Qg @ Vgs 58nC
	Minimum Operating Temperature -55°C
	Maximum Power Dissipation Pd 240W
	Maximum Gate Source Voltage Vgs 30 V
	Forward Voltage Vf 1.3V
	Maximum Operating Temperature 150°C
	Height 20.82mm
	Standards/Approvals No
	Width 4.82 mm
	Length 15.87mm
	Automotive Standard No

COO (Country of Origin):: CN

SUPERFET III MOSFET is ON Semiconductor’s brand−new high voltage super−junction (SJ) MOSFET family that is utilizing charge balance technology for outstanding low on−resistance and lower gate charge performance. This advanced technology is tailored to minimize conduction loss, provide superior switching performance, and withstand extreme dv/dt rate.

Features:

700 V @ TJ = 150 °C

Ultra Low Gate Charge (Typ. Qg = 58 nC)

Low Effective Output Capacitance (Typ. Coss(eff.) = 553 pF)

Excellent body diode performance (low Qrr, robust body diode)

Optimized Capacitance

Typ. RDS(on) = 98 mΩ

Benefits:

Higher system reliability at low temperature operation

Lower switching loss

Higher system reliability in LLC and Phase shift full bridge circuit

Lower peak Vds and lower Vgs oscillation

Applications:

Telecommunication

Cloud system

Industrial

End Products:

Telecom power

Server power

EV charger

Solar / UPS

onsemi NTHL Type N-Channel MOSFET, 30 A, 650 V Enhancement, 3-Pin TO-247

訂單超過 $1,300.00 免費送貨

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