onsemi FCP Type N-Channel MOSFET, 24 A, 650 V Enhancement, 3-Pin TO-220
- RS庫存編號:
- 178-4242
- 製造零件編號:
- FCP125N65S3R0
- 製造商:
- onsemi
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可享批量折扣
小計（1 管，共 50 件）*
TWD4,000.00
(不含稅)
TWD4,200.00
(含稅)
訂單超過 $1,300.00 免費送貨
有庫存
- 800 件準備從其他地點送貨
**需要更多嗎？**輸入您需要的數量，然後按一下「查看送貨日期」以查詢更多庫存和送貨詳細資訊。
單位 | 每單位 | 每管* |
|---|---|---|
| 50 - 50 | TWD80.00 | TWD4,000.00 |
| 100 - 150 | TWD78.20 | TWD3,910.00 |
| 200 + | TWD76.50 | TWD3,825.00 |
* 參考價格
- RS庫存編號:
- 178-4242
- 製造零件編號:
- FCP125N65S3R0
- 製造商:
- onsemi
規格
產品概覽和技術數據資料表
法例與合規
產品詳細資訊
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選取全部 | 屬性 | 值 |
|---|---|---|
| 品牌 | onsemi | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 24A | |
| Maximum Drain Source Voltage Vds | 650V | |
| Series | FCP | |
| Package Type | TO-220 | |
| Mount Type | Through Hole | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 125mΩ | |
| Channel Mode | Enhancement | |
| Forward Voltage Vf | 1.2V | |
| Minimum Operating Temperature | -55°C | |
| Typical Gate Charge Qg @ Vgs | 46nC | |
| Maximum Power Dissipation Pd | 181W | |
| Maximum Gate Source Voltage Vgs | 30 V | |
| Maximum Operating Temperature | 150°C | |
| Standards/Approvals | No | |
| Length | 10.67mm | |
| Height | 16.3mm | |
| Width | 4.7 mm | |
| Automotive Standard | No | |
| 選取全部 | ||
|---|---|---|
品牌 onsemi | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 24A | ||
Maximum Drain Source Voltage Vds 650V | ||
Series FCP | ||
Package Type TO-220 | ||
Mount Type Through Hole | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 125mΩ | ||
Channel Mode Enhancement | ||
Forward Voltage Vf 1.2V | ||
Minimum Operating Temperature -55°C | ||
Typical Gate Charge Qg @ Vgs 46nC | ||
Maximum Power Dissipation Pd 181W | ||
Maximum Gate Source Voltage Vgs 30 V | ||
Maximum Operating Temperature 150°C | ||
Standards/Approvals No | ||
Length 10.67mm | ||
Height 16.3mm | ||
Width 4.7 mm | ||
Automotive Standard No | ||
- COO (Country of Origin):
- CN
SUPERFET III MOSFET is ON Semiconductor’s brand−new high voltage super−junction (SJ) MOSFET family that is utilizing charge balance technology for outstanding low on−resistance and lower gate charge performance. This advanced technology is tailored to minimize conduction loss, provide superior switching performance, and withstand extreme dv/dt rate. Consequently, SUPERFET III MOSFET Easy drive series helps manage EMI issues and allows for easier design implementation.
700 V @ TJ = 150 °C
Low Effective Output Capacitance (Typ. Coss(eff.) = 439 pF)
Ultra Low Gate Charge (Typ. Qg = 46 nC)
Optimized Capacitance
Typ. RDS(on) = 105 mΩ
Internal Gate Resistance: 0.5 Ω
Benefits:
Higher system reliability at low temperature operation
Low switching loss
Low switching loss
Lower peak Vds and lower Vgs oscillation
Applications:
Computing
Consummer
Industrial
End Products:
Notebook / Desktop computer / Game console
Telecom / Server
LCD / LED TV
LED Lighting / Ballast
Adapter
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