Vishay Siliconix Dual TrenchFET 2 Type N-Channel Power MOSFET, 30 A, 30 V Enhancement, 8-Pin PowerPAIR 3 x 3
- RS庫存編號:
- 178-3944
- 製造零件編號:
- SiZ350DT-T1-GE3
- 製造商:
- Vishay Siliconix
此圖片僅供參考，請參閲產品詳細資訊及規格
可享批量折扣
小計（1 包，共 10 件）*
TWD341.00
(不含稅)
TWD358.00
(含稅)
訂單超過 $1,300.00 免費送貨
暫時缺貨
- 2,770 件準備從其他地點送貨
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單位 | 每單位 | 每包* |
|---|---|---|
| 10 - 740 | TWD34.10 | TWD341.00 |
| 750 - 1490 | TWD33.20 | TWD332.00 |
| 1500 + | TWD32.80 | TWD328.00 |
* 參考價格
- RS庫存編號:
- 178-3944
- 製造零件編號:
- SiZ350DT-T1-GE3
- 製造商:
- Vishay Siliconix
規格
產品概覽和技術數據資料表
法例與合規
產品詳細資訊
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選取全部 | 屬性 | 值 |
|---|---|---|
| 品牌 | Vishay Siliconix | |
| Product Type | Power MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 30A | |
| Maximum Drain Source Voltage Vds | 30V | |
| Series | TrenchFET | |
| Package Type | PowerPAIR 3 x 3 | |
| Mount Type | Surface | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance Rds | 9mΩ | |
| Channel Mode | Enhancement | |
| Typical Gate Charge Qg @ Vgs | 12.1nC | |
| Maximum Gate Source Voltage Vgs | 16 V | |
| Maximum Power Dissipation Pd | 16.7W | |
| Minimum Operating Temperature | 150°C | |
| Maximum Operating Temperature | -55°C | |
| Transistor Configuration | Dual | |
| Width | 3 mm | |
| Height | 0.75mm | |
| Standards/Approvals | No | |
| Length | 3mm | |
| Number of Elements per Chip | 2 | |
| Automotive Standard | No | |
| 選取全部 | ||
|---|---|---|
品牌 Vishay Siliconix | ||
Product Type Power MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 30A | ||
Maximum Drain Source Voltage Vds 30V | ||
Series TrenchFET | ||
Package Type PowerPAIR 3 x 3 | ||
Mount Type Surface | ||
Pin Count 8 | ||
Maximum Drain Source Resistance Rds 9mΩ | ||
Channel Mode Enhancement | ||
Typical Gate Charge Qg @ Vgs 12.1nC | ||
Maximum Gate Source Voltage Vgs 16 V | ||
Maximum Power Dissipation Pd 16.7W | ||
Minimum Operating Temperature 150°C | ||
Maximum Operating Temperature -55°C | ||
Transistor Configuration Dual | ||
Width 3 mm | ||
Height 0.75mm | ||
Standards/Approvals No | ||
Length 3mm | ||
Number of Elements per Chip 2 | ||
Automotive Standard No | ||
豁免
- COO (Country of Origin):
- TW
TrenchFET® Gen IV power MOSFET
High side and low side MOSFETs form optimized
combination for 50 % duty cycle
Optimized RDS - Qg and RDS - Qgd FOM elevates
efficiency for high frequency switching
APPLICATIONS
Synchronous buck
DC/DC conversion
Half bridge
POL
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