Vishay Siliconix Dual TrenchFET 2 N-Channel Power MOSFET, 30 A, 30 V Enhancement, 8-Pin PowerPAIR 3 x 3 SiZ348DT-T1-GE3

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包裝方式:
RS庫存編號:
178-3932
製造零件編號:
SiZ348DT-T1-GE3
製造商:
Vishay Siliconix
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品牌

Vishay Siliconix

Product Type

Power MOSFET

Channel Type

N

Maximum Continuous Drain Current Id

30A

Maximum Drain Source Voltage Vds

30V

Series

TrenchFET

Package Type

PowerPAIR 3 x 3

Mount Type

Surface

Pin Count

8

Maximum Drain Source Resistance Rds

10mΩ

Channel Mode

Enhancement

Forward Voltage Vf

1.2V

Maximum Gate Source Voltage Vgs

-16V, +20V

Maximum Power Dissipation Pd

16.7W

Minimum Operating Temperature

-55°C

Typical Gate Charge Qg @ Vgs

12.1nC

Maximum Operating Temperature

+150°C

Transistor Configuration

Dual

Length

3mm

Width

3mm

Height

750μm

Standards/Approvals

No

Number of Elements per Chip

2

Automotive Standard

No

豁免

COO (Country of Origin):
TW
TrenchFET® Gen IV power MOSFET

High side and low side MOSFETs form optimized combination for 50 % duty cycle

Optimized RDS - Qg and RDS - Qgd FOM elevates efficiency for high frequency switching

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