Vishay IRFS9N60A Type N-Channel Power MOSFET, 9.2 A, 600 V Enhancement, 3-Pin TO-263 IRFS9N60APBF
- RS庫存編號:
- 178-0850
- 製造零件編號:
- IRFS9N60APBF
- 製造商:
- Vishay
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TWD3,490.00
(不含稅)
TWD3,664.50
(含稅)
訂單超過 $1,300.00 免費送貨
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- 550 件準備從其他地點送貨
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單位 | 每單位 | 每管* |
|---|---|---|
| 50 - 200 | TWD69.80 | TWD3,490.00 |
| 250 + | TWD62.90 | TWD3,145.00 |
* 參考價格
- RS庫存編號:
- 178-0850
- 製造零件編號:
- IRFS9N60APBF
- 製造商:
- Vishay
規格
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產品詳細資訊
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選取全部 | 屬性 | 值 |
|---|---|---|
| 品牌 | Vishay | |
| Product Type | Power MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 9.2A | |
| Maximum Drain Source Voltage Vds | 600V | |
| Series | IRFS9N60A | |
| Package Type | TO-263 | |
| Mount Type | Surface | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 750mΩ | |
| Channel Mode | Enhancement | |
| Minimum Operating Temperature | -55°C | |
| Typical Gate Charge Qg @ Vgs | 49nC | |
| Maximum Power Dissipation Pd | 170W | |
| Maximum Gate Source Voltage Vgs | 30V | |
| Forward Voltage Vf | 1.5V | |
| Maximum Operating Temperature | 150°C | |
| Length | 10.67mm | |
| Standards/Approvals | RoHS | |
| Width | 9.65mm | |
| Height | 4.83mm | |
| Automotive Standard | No | |
| 選取全部 | ||
|---|---|---|
品牌 Vishay | ||
Product Type Power MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 9.2A | ||
Maximum Drain Source Voltage Vds 600V | ||
Series IRFS9N60A | ||
Package Type TO-263 | ||
Mount Type Surface | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 750mΩ | ||
Channel Mode Enhancement | ||
Minimum Operating Temperature -55°C | ||
Typical Gate Charge Qg @ Vgs 49nC | ||
Maximum Power Dissipation Pd 170W | ||
Maximum Gate Source Voltage Vgs 30V | ||
Forward Voltage Vf 1.5V | ||
Maximum Operating Temperature 150°C | ||
Length 10.67mm | ||
Standards/Approvals RoHS | ||
Width 9.65mm | ||
Height 4.83mm | ||
Automotive Standard No | ||
Vishay IRFS9N60A Series Power MOSFET, 600V Drain Source Voltage, 9.2A Continuous Drain Current - IRFS9N60APBF
This power MOSFET is a high-voltage, N-channel switching transistor designed for surface-mount applications where robust thermal and electrical performance is required. It operates over an extended ambient range and is intended for use in power conversion, switching and high-voltage circuits that demand a combination of current handling and voltage endurance.
Features and Benefits:
• 600V drain rating enables high-voltage switching
• 9.2A continuous current capability supports moderate loads
• 750mΩ Rds(on) reduces conduction losses during operation
• 170W maximum dissipation allows significant power throughput
• 49nC typical gate charge optimises switching dynamics
• 30V gate threshold permits common gate-drive voltages
• 9.2A continuous current capability supports moderate loads
• 750mΩ Rds(on) reduces conduction losses during operation
• 170W maximum dissipation allows significant power throughput
• 49nC typical gate charge optimises switching dynamics
• 30V gate threshold permits common gate-drive voltages
Applications
• Suitable for offline switch-mode power supplies
• Ideal for high-voltage motor drive stages
• Used for inverter and renewable energy converters
• Can be used for industrial power controllers
• Appropriate for high-voltage lighting ballast designs
• Ideal for high-voltage motor drive stages
• Used for inverter and renewable energy converters
• Can be used for industrial power controllers
• Appropriate for high-voltage lighting ballast designs
What thermal extremes can it tolerate during operation?
The device is specified to function from -55°C up to 150°C, permitting use in a wide range of thermal environments.
How is the component packaged for mounting on boards?
It is supplied in a TO-263 package intended for surface mounting, facilitating heat dissipation and automated assembly.
What gate-drive voltage limits should be observed?
The maximum gate-to-source voltage is 30V, which should not be exceeded to avoid damaging the gate oxide.
Does the device use enhancement or depletion mode operation?
It is an enhancement-mode N-channel MOSFET, requiring a positive gate drive relative to source for conduction.
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