Vishay IRF830A Type N-Channel Power MOSFET, 5 A, 500 V Enhancement, 3-Pin TO-220AB IRF830APBF

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RS庫存編號:
178-0834
製造零件編號:
IRF830APBF
製造商:
Vishay
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品牌

Vishay

Channel Type

Type N

Product Type

Power MOSFET

Maximum Continuous Drain Current Id

5A

Maximum Drain Source Voltage Vds

500V

Series

IRF830A

Package Type

TO-220AB

Mount Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance Rds

1.4Ω

Channel Mode

Enhancement

Maximum Power Dissipation Pd

74W

Forward Voltage Vf

1.5V

Minimum Operating Temperature

-55°C

Typical Gate Charge Qg @ Vgs

24nC

Maximum Gate Source Voltage Vgs

30V

Maximum Operating Temperature

150°C

Height

9.01mm

Width

4.7mm

Standards/Approvals

RoHS

Length

10.41mm

Automotive Standard

No

Vishay IRF830A Series Power MOSFET, 500V Drain Source Voltage, 5A Continuous Drain Current - IRF830APBF


This power MOSFET is a high-voltage N-channel enhancement transistor designed for switching and power-conversion tasks in industrial and commercial electronics. It operates across a wide temperature range for demanding environments and is supplied in a through-hole TO-220AB package for straightforward mounting and thermal management.

Features and Benefits:


• 500V drain rating enables high-voltage switching applications
• 1.4Ω maximum Rds reduces conduction losses under load
• 5A continuous drain current supports moderate current designs
• 74W maximum power dissipation allows substantial heat handling
• 24nC typical gate charge yields predictable switching performance
• 30V gate tolerance permits robust gate-drive margins

Applications


• Suitable for high-voltage supply switching in inverters
• Ideal for industrial motor-drive switching stages
• Used with discrete power supplies in laboratory equipment
• Can be used for resistive and inductive load switching
• Appropriate for through-hole prototyping and repair projects

What thermal performance considerations should be made when using it?


Thermal management must account for the 74W dissipation rating

a suitable heatsink and correct mounting in the TO-220AB orientation will maintain junction temperatures within safe limits.

How does the gate drive affect switching behaviour?


With a typical gate charge of 24nC and a maximum Vgs of 30V, gate-drive circuitry should be sized to provide sufficient current for desired rise and fall times while keeping gate voltage below the specified limit.

What environmental limits define its operating range?


The device is rated to function from -55°C up to 150°C, so system design should ensure ambient and thermal-resistance values keep junction temperature inside that span.

Is it suitable for automotive-grade designs?


It is not classified as automotive grade

designers should consider automotive-specific alternatives when vehicle-level qualifications are required.

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