製造零件編號

Vishay IRF830A Type N-Channel Power MOSFET, 5 A, 500 V Enhancement, 3-Pin TO-263

RS庫存編號:: 145-1758
製造零件編號:: IRF830ASPBF
製造商:: Vishay

Vishay IRF830A Type N-Channel Power MOSFET, 5 A, 500 V Enhancement, 3-Pin TO-263

此圖片僅供參考，請參閲產品詳細資訊及規格

可享批量折扣

小計（1 管，共 50 件）*

TWD1,970.00

(不含稅)

TWD2,068.50

訂單超過 $1,300.00 免費送貨

最後的 RS 庫存

最終 850 個，準備發貨

單位	每單位	每管*
50 - 200	TWD39.40	TWD1,970.00
250 +	TWD35.50	TWD1,775.00

* 參考價格

RS庫存編號:: 145-1758
製造零件編號:: IRF830ASPBF
製造商:: Vishay

規格

產品概覽和技術數據資料表

法例與合規

產品詳細資訊

透過選取一個或多個屬性來查找類似產品。

選取全部	屬性	值
	品牌	Vishay
	Product Type	Power MOSFET
	Channel Type	Type N
	Maximum Continuous Drain Current Id	5A
	Maximum Drain Source Voltage Vds	500V
	Package Type	TO-263
	Series	IRF830A
	Mount Type	Surface
	Pin Count	3
	Maximum Drain Source Resistance Rds	1.4Ω
	Channel Mode	Enhancement
	Forward Voltage Vf	1.5V
	Minimum Operating Temperature	-55°C
	Typical Gate Charge Qg @ Vgs	24nC
	Maximum Power Dissipation Pd	74W
	Maximum Gate Source Voltage Vgs	±30 V
	Maximum Operating Temperature	150°C
	Standards/Approvals	IEC 61249-2-21, RoHS 2002/95/EC
	Length	10.67mm
	Height	4.83mm
	Width	9.65 mm
	Automotive Standard	No

	選取全部
	品牌 Vishay
	Product Type Power MOSFET
	Channel Type Type N
	Maximum Continuous Drain Current Id 5A
	Maximum Drain Source Voltage Vds 500V
	Package Type TO-263
	Series IRF830A
	Mount Type Surface
	Pin Count 3
	Maximum Drain Source Resistance Rds 1.4Ω
	Channel Mode Enhancement
	Forward Voltage Vf 1.5V
	Minimum Operating Temperature -55°C
	Typical Gate Charge Qg @ Vgs 24nC
	Maximum Power Dissipation Pd 74W
	Maximum Gate Source Voltage Vgs ±30 V
	Maximum Operating Temperature 150°C
	Standards/Approvals IEC 61249-2-21, RoHS 2002/95/EC
	Length 10.67mm
	Height 4.83mm
	Width 9.65 mm
	Automotive Standard No

Vishay IRF830A Type N-Channel Power MOSFET, 5 A, 500 V Enhancement, 3-Pin TO-263

訂單超過 $1,300.00 免費送貨

N-Channel MOSFET, 500V, Vishay Semiconductor

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