onsemi FCPF Type N-Channel MOSFET, 44 A, 650 V Enhancement, 3-Pin TO-220 FCPF067N65S3

RS庫存編號:: 172-4634
製造零件編號:: FCPF067N65S3
製造商:: onsemi

onsemi FCPF Type N-Channel MOSFET, 44 A, 650 V Enhancement, 3-Pin TO-220 FCPF067N65S3

此圖片僅供參考，請參閲產品詳細資訊及規格

可享批量折扣

小計（1 包，共 5 件）*

TWD860.00

(不含稅)

TWD903.00

訂單超過 $1,300.00 免費送貨

有庫存

加上 960 件從 2026年1月19日起發貨

**需要更多嗎？**輸入您需要的數量，然後按一下「查看送貨日期」以查詢更多庫存和送貨詳細資訊。

單位	每單位	每包*
5 - 245	TWD172.00	TWD860.00
250 - 495	TWD167.60	TWD838.00
500 +	TWD165.20	TWD826.00

* 參考價格

RS庫存編號:: 172-4634
製造零件編號:: FCPF067N65S3
製造商:: onsemi

規格

產品概覽和技術數據資料表

法例與合規

產品詳細資訊

透過選取一個或多個屬性來查找類似產品。

選取全部	屬性	值
	品牌	onsemi
	Product Type	MOSFET
	Channel Type	Type N
	Maximum Continuous Drain Current Id	44A
	Maximum Drain Source Voltage Vds	650V
	Package Type	TO-220
	Series	FCPF
	Mount Type	Through Hole
	Pin Count	3
	Maximum Drain Source Resistance Rds	67mΩ
	Channel Mode	Enhancement
	Typical Gate Charge Qg @ Vgs	78nC
	Minimum Operating Temperature	-55°C
	Maximum Power Dissipation Pd	46W
	Maximum Gate Source Voltage Vgs	30 V
	Forward Voltage Vf	1.2V
	Maximum Operating Temperature	150°C
	Length	10.36mm
	Width	4.9 mm
	Height	16.07mm
	Standards/Approvals	No
	Automotive Standard	No

	選取全部
	品牌 onsemi
	Product Type MOSFET
	Channel Type Type N
	Maximum Continuous Drain Current Id 44A
	Maximum Drain Source Voltage Vds 650V
	Package Type TO-220
	Series FCPF
	Mount Type Through Hole
	Pin Count 3
	Maximum Drain Source Resistance Rds 67mΩ
	Channel Mode Enhancement
	Typical Gate Charge Qg @ Vgs 78nC
	Minimum Operating Temperature -55°C
	Maximum Power Dissipation Pd 46W
	Maximum Gate Source Voltage Vgs 30 V
	Forward Voltage Vf 1.2V
	Maximum Operating Temperature 150°C
	Length 10.36mm
	Width 4.9 mm
	Height 16.07mm
	Standards/Approvals No
	Automotive Standard No

COO (Country of Origin):: CN

SuperFET® III MOSFET is ON Semiconductor’s brand-new high voltage super-junction (SJ) MOSFET family that is utilizing charge balance technology for outstanding low on-resistance and lower gate charge performance. This advanced technology is tailored to minimize conduction loss, provide superior switching performance, and withstand extreme dv/dt rate. Consequently, SuperFET III MOSFET is very suitable for various power system for miniaturization and higher efficiency.

700 V @ TJ = 150 oC

Higher system reliability at low temperature operation

Ultra Low Gate Charge (Typ. Qg = 78 nC)

Lower switching loss

Low Effective Output Capacitance (Typ. Coss(eff.) = 715 pF)

Lower switching loss

Optimized Capacitance

Lower peak Vds and lower Vgs oscillation

Typ. RDS(on) = 62 mΩ

Wave soldering guarantee

Computing

Telecomunication

Industrial

Telecom / Server

Solar inverter / UPS

EVC

onsemi FCPF Type N-Channel MOSFET, 44 A, 650 V Enhancement, 3-Pin TO-220 FCPF067N65S3

訂單超過 $1,300.00 免費送貨

相關連結