onsemi FCB Type N-Channel MOSFET, 14 A, 650 V Enhancement, 3-Pin TO-263 FCB199N65S3

RS庫存編號:: 172-4630
製造零件編號:: FCB199N65S3
製造商:: onsemi

onsemi FCB Type N-Channel MOSFET, 14 A, 650 V Enhancement, 3-Pin TO-263 FCB199N65S3

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RS庫存編號:: 172-4630
製造零件編號:: FCB199N65S3
製造商:: onsemi

規格

產品概覽和技術數據資料表

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產品詳細資訊

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選取全部	屬性	值
	品牌	onsemi
	Product Type	MOSFET
	Channel Type	Type N
	Maximum Continuous Drain Current Id	14A
	Maximum Drain Source Voltage Vds	650V
	Package Type	TO-263
	Series	FCB
	Mount Type	Surface
	Pin Count	3
	Maximum Drain Source Resistance Rds	199mΩ
	Channel Mode	Enhancement
	Minimum Operating Temperature	-55°C
	Forward Voltage Vf	1.2V
	Maximum Gate Source Voltage Vgs	30 V
	Typical Gate Charge Qg @ Vgs	30nC
	Maximum Power Dissipation Pd	98W
	Maximum Operating Temperature	150°C
	Height	4.83mm
	Length	10.67mm
	Standards/Approvals	No
	Width	9.65 mm
	Automotive Standard	No

	選取全部
	品牌 onsemi
	Product Type MOSFET
	Channel Type Type N
	Maximum Continuous Drain Current Id 14A
	Maximum Drain Source Voltage Vds 650V
	Package Type TO-263
	Series FCB
	Mount Type Surface
	Pin Count 3
	Maximum Drain Source Resistance Rds 199mΩ
	Channel Mode Enhancement
	Minimum Operating Temperature -55°C
	Forward Voltage Vf 1.2V
	Maximum Gate Source Voltage Vgs 30 V
	Typical Gate Charge Qg @ Vgs 30nC
	Maximum Power Dissipation Pd 98W
	Maximum Operating Temperature 150°C
	Height 4.83mm
	Length 10.67mm
	Standards/Approvals No
	Width 9.65 mm
	Automotive Standard No

COO (Country of Origin):: CN

SuperFET® III MOSFET is ON Semiconductor’s brand-new high voltage super-junction (SJ) MOSFET family that is utilizing charge balance technology for outstanding low on-resistance and lower gate charge performance. This advanced technology is tailored to minimize conduction loss, provide superior switching performance, and withstand extreme dv/dt rate. Consequently, SuperFET III MOSFET is very suitable for various power system for miniaturization and higher efficiency.

700 V @ TJ = 150 oC

Higher system reliability at low temperature operation

Ultra Low Gate Charge (Typ. Qg = 30 nC)

Lower switching loss

Low Effective Output Capacitance (Typ. Coss(eff.) = 277 pF)

Lower switching loss

Optimized Capacitance

Lower peak Vds and lower Vgs oscillation

Internal Gate resistance: 7.0 ohm

Lower peak Vds and lower Vgs oscillation

Typ. RDS(on) = 170 mΩ

onsemi FCB Type N-Channel MOSFET, 14 A, 650 V Enhancement, 3-Pin TO-263 FCB199N65S3

訂單超過 $1,300.00 免費送貨

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