onsemi Type N-Channel MOSFET, 40 A, 650 V Enhancement, 3-Pin TO-263 NVB082N65S3F

RS庫存編號:: 186-1481
製造零件編號:: NVB082N65S3F
製造商:: onsemi

onsemi Type N-Channel MOSFET, 40 A, 650 V Enhancement, 3-Pin TO-263 NVB082N65S3F

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小計（1 包，共 2 件）*

TWD334.00

(不含稅)

TWD350.70

訂單超過 $1,300.00 免費送貨

最後的 RS 庫存

最終 726 個，準備發貨

單位	每單位	每包*
2 - 198	TWD167.00	TWD334.00
200 - 398	TWD163.00	TWD326.00
400 +	TWD160.50	TWD321.00

* 參考價格

RS庫存編號:: 186-1481
製造零件編號:: NVB082N65S3F
製造商:: onsemi

規格

產品概覽和技術數據資料表

法例與合規

產品詳細資訊

透過選取一個或多個屬性來查找類似產品。

選取全部	屬性	值
	品牌	onsemi
	Product Type	MOSFET
	Channel Type	Type N
	Maximum Continuous Drain Current Id	40A
	Maximum Drain Source Voltage Vds	650V
	Package Type	TO-263
	Mount Type	Surface
	Pin Count	3
	Maximum Drain Source Resistance Rds	82mΩ
	Channel Mode	Enhancement
	Maximum Gate Source Voltage Vgs	30 V
	Typical Gate Charge Qg @ Vgs	81nC
	Maximum Power Dissipation Pd	313W
	Minimum Operating Temperature	-55°C
	Maximum Operating Temperature	150°C
	Standards/Approvals	No
	Height	4.58mm
	Length	10.67mm
	Width	9.65 mm
	Automotive Standard	AEC-Q101

	選取全部
	品牌 onsemi
	Product Type MOSFET
	Channel Type Type N
	Maximum Continuous Drain Current Id 40A
	Maximum Drain Source Voltage Vds 650V
	Package Type TO-263
	Mount Type Surface
	Pin Count 3
	Maximum Drain Source Resistance Rds 82mΩ
	Channel Mode Enhancement
	Maximum Gate Source Voltage Vgs 30 V
	Typical Gate Charge Qg @ Vgs 81nC
	Maximum Power Dissipation Pd 313W
	Minimum Operating Temperature -55°C
	Maximum Operating Temperature 150°C
	Standards/Approvals No
	Height 4.58mm
	Length 10.67mm
	Width 9.65 mm
	Automotive Standard AEC-Q101

Datasheet NVB082N65S3F

不相容

SUPERFET® III MOSFET is ON Semiconductor’s brand−new high voltage super−junction (SJ) MOSFET family that is utilizing charge balance technology for outstanding low on−resistance and lower gate charge performance. This advanced technology is tailored to minimize conduction loss, provide superior switching performance, and withstand extreme dv/dt rate. Consequently, SUPERFET III MOSFET is very suitable for the various power system for miniaturization and higher efficiency. SUPERFET III FRFET® MOSFET’s optimized reverse recovery performance of body diode can remove additional component and improve system reliability.

700 V @ TJ = 150°C

Typ. RDS(on) = 64 m

Ultra Low Gate Charge (Typ. Qg = 81 nC)

Low Effective Output Capacitance (Typ. Coss(eff.) = 722 pF)

These Devices are Pb−Free

Typical Applications

Automotive On Board Charger

Automotive DC/DC Converter for HEV

onsemi Type N-Channel MOSFET, 40 A, 650 V Enhancement, 3-Pin TO-263 NVB082N65S3F

訂單超過 $1,300.00 免費送貨

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