Toshiba Type N-Channel MOSFET, 65 A, 40 V Enhancement, 3-Pin TO-252 TK65S04N1L
- RS庫存編號:
- 171-2494
- 製造零件編號:
- TK65S04N1L
- 製造商:
- Toshiba
此圖片僅供參考，請參閲產品詳細資訊及規格
可享批量折扣
小計（1 包，共 10 件）*
TWD470.00
(不含稅)
TWD493.50
(含稅)
訂單超過 $1,300.00 免費送貨
有庫存
- 2,830 件準備從其他地點送貨
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單位 | 每單位 | 每包* |
|---|---|---|
| 10 - 490 | TWD47.00 | TWD470.00 |
| 500 - 990 | TWD45.80 | TWD458.00 |
| 1000 + | TWD45.20 | TWD452.00 |
* 參考價格
- RS庫存編號:
- 171-2494
- 製造零件編號:
- TK65S04N1L
- 製造商:
- Toshiba
規格
產品概覽和技術數據資料表
法例與合規
產品詳細資訊
透過選取一個或多個屬性來查找類似產品。
選取全部 | 屬性 | 值 |
|---|---|---|
| 品牌 | Toshiba | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 65A | |
| Maximum Drain Source Voltage Vds | 40V | |
| Package Type | TO-252 | |
| Mount Type | Surface | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 4.3mΩ | |
| Channel Mode | Enhancement | |
| Maximum Power Dissipation Pd | 107W | |
| Forward Voltage Vf | -1.2V | |
| Minimum Operating Temperature | -55°C | |
| Typical Gate Charge Qg @ Vgs | 39nC | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Maximum Operating Temperature | 175°C | |
| Length | 6.5mm | |
| Width | 7 mm | |
| Height | 2.3mm | |
| Standards/Approvals | No | |
| Automotive Standard | AEC-Q101 | |
| 選取全部 | ||
|---|---|---|
品牌 Toshiba | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 65A | ||
Maximum Drain Source Voltage Vds 40V | ||
Package Type TO-252 | ||
Mount Type Surface | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 4.3mΩ | ||
Channel Mode Enhancement | ||
Maximum Power Dissipation Pd 107W | ||
Forward Voltage Vf -1.2V | ||
Minimum Operating Temperature -55°C | ||
Typical Gate Charge Qg @ Vgs 39nC | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Maximum Operating Temperature 175°C | ||
Length 6.5mm | ||
Width 7 mm | ||
Height 2.3mm | ||
Standards/Approvals No | ||
Automotive Standard AEC-Q101 | ||
豁免
- COO (Country of Origin):
- JP
Applications
Automotive
Motor Drivers
Switching Voltage Regulators
Features
Low drain-source on-resistance: RDS(ON) = 3.3 mΩ (typ
Low leakage current: IDSS = 10 μA (max) (VDS = 40 V)
Enhancement mode: Vth = 1.5 to 2.5 V (VDS = 10 V, ID = 0.3 mA)
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