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Toshiba Type N-Channel MOSFET, 65 A, 40 V Enhancement, 3-Pin TO-252

Name: Toshiba Type N-Channel MOSFET, 65 A, 40 V Enhancement, 3-Pin TO-252
Brand: Toshiba
SKU: 171-2428
Availability: InStock

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小計（1 卷，共 2000 件）*

TWD57,200.00

(不含稅)

TWD60,060.00

(含稅)

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單位	每單位	每卷*
2000 - 8000	TWD28.60	TWD57,200.00
10000 +	TWD25.70	TWD51,400.00

* 參考價格

規格

產品概覽和技術數據資料表

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產品詳細資訊

透過選取一個或多個屬性來查找類似產品。

選取全部	屬性	值
	品牌	Toshiba
	Channel Type	Type N
	Product Type	MOSFET
	Maximum Continuous Drain Current Id	65A
	Maximum Drain Source Voltage Vds	40V
	Package Type	TO-252
	Mount Type	Surface
	Pin Count	3
	Maximum Drain Source Resistance Rds	4.3mΩ
	Channel Mode	Enhancement
	Forward Voltage Vf	-1.2V
	Maximum Power Dissipation Pd	107W
	Minimum Operating Temperature	-55°C
	Maximum Gate Source Voltage Vgs	20V
	Typical Gate Charge Qg @ Vgs	39nC
	Maximum Operating Temperature	175°C
	Width	7mm
	Standards/Approvals	No
	Height	2.3mm
	Length	6.5mm
	Automotive Standard	AEC-Q101

	選取全部
	品牌 Toshiba
	Channel Type Type N
	Product Type MOSFET
	Maximum Continuous Drain Current Id 65A
	Maximum Drain Source Voltage Vds 40V
	Package Type TO-252
	Mount Type Surface
	Pin Count 3
	Maximum Drain Source Resistance Rds 4.3mΩ
	Channel Mode Enhancement
	Forward Voltage Vf -1.2V
	Maximum Power Dissipation Pd 107W
	Minimum Operating Temperature -55°C
	Maximum Gate Source Voltage Vgs 20V
	Typical Gate Charge Qg @ Vgs 39nC
	Maximum Operating Temperature 175°C
	Width 7mm
	Standards/Approvals No
	Height 2.3mm
	Length 6.5mm
	Automotive Standard AEC-Q101

不適用

Applications

Automotive

Motor Drivers

Switching Voltage Regulators

Features

Low drain-source on-resistance: RDS(ON) = 3.3 mΩ (typ

Low leakage current: IDSS = 10 μA (max) (VDS = 40 V)

Enhancement mode: Vth = 1.5 to 2.5 V (VDS = 10 V, ID = 0.3 mA)

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