Toshiba Type P-Channel MOSFET, 15 A, 40 V Enhancement, 3-Pin TO-252
- RS庫存編號:
- 171-2412
- 製造零件編號:
- TJ15P04M3
- 製造商:
- Toshiba
此圖片僅供參考，請參閲產品詳細資訊及規格
可享批量折扣
小計（1 卷，共 2000 件）*
TWD25,600.00
(不含稅)
TWD26,880.00
(含稅)
訂單超過 $1,300.00 免費送貨
暫時缺貨
- 從 2026年6月15日 發貨
**需要更多嗎？**輸入您需要的數量，然後按一下「查看送貨日期」以查詢更多庫存和送貨詳細資訊。
單位 | 每單位 | 每卷* |
|---|---|---|
| 2000 - 2000 | TWD12.80 | TWD25,600.00 |
| 4000 - 6000 | TWD12.50 | TWD25,000.00 |
| 8000 + | TWD12.20 | TWD24,400.00 |
* 參考價格
- RS庫存編號:
- 171-2412
- 製造零件編號:
- TJ15P04M3
- 製造商:
- Toshiba
規格
產品概覽和技術數據資料表
法例與合規
產品詳細資訊
透過選取一個或多個屬性來查找類似產品。
選取全部 | 屬性 | 值 |
|---|---|---|
| 品牌 | Toshiba | |
| Channel Type | Type P | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 15A | |
| Maximum Drain Source Voltage Vds | 40V | |
| Package Type | TO-252 | |
| Mount Type | Surface | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 48mΩ | |
| Channel Mode | Enhancement | |
| Minimum Operating Temperature | -55°C | |
| Maximum Power Dissipation Pd | 29W | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Typical Gate Charge Qg @ Vgs | 26nC | |
| Forward Voltage Vf | 1.2V | |
| Maximum Operating Temperature | 150°C | |
| Height | 2.3mm | |
| Length | 6.6mm | |
| Width | 7.18 mm | |
| Standards/Approvals | No | |
| Automotive Standard | No | |
| 選取全部 | ||
|---|---|---|
品牌 Toshiba | ||
Channel Type Type P | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 15A | ||
Maximum Drain Source Voltage Vds 40V | ||
Package Type TO-252 | ||
Mount Type Surface | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 48mΩ | ||
Channel Mode Enhancement | ||
Minimum Operating Temperature -55°C | ||
Maximum Power Dissipation Pd 29W | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Typical Gate Charge Qg @ Vgs 26nC | ||
Forward Voltage Vf 1.2V | ||
Maximum Operating Temperature 150°C | ||
Height 2.3mm | ||
Length 6.6mm | ||
Width 7.18 mm | ||
Standards/Approvals No | ||
Automotive Standard No | ||
豁免
- COO (Country of Origin):
- CN
Low drain-source on-resistance: RDS(ON) = 28 mΩ (typ.) (VGS = -10 V)
Low leakage current: IDSS = -10 μA (max) (VDS = -40 V)
Enhancement mode: Vth = -0.8 to -2.0 V (VDS = -10 V, ID = -0.1 mA)
Applications:
Motor Drivers
Power Management Switches
相關連結
- Toshiba Type P-Channel MOSFET 40 V Enhancement, 3-Pin TO-252 TJ15P04M3
- Toshiba Type P-Channel MOSFET 40 V Enhancement, 3-Pin TO-252
- Toshiba Type P-Channel MOSFET 40 V Enhancement, 3-Pin TO-252 TJ60S04M3L
- Toshiba Type P-Channel MOSFET 60 V Enhancement, 3-Pin TO-252
- Toshiba Type P-Channel MOSFET 60 V Enhancement, 3-Pin TO-252 TJ8S06M3L
- Toshiba U-MOSVIII-H Type N-Channel MOSFET 40 V EnhancementLQ(O
- Infineon SPD15P10P Type P-Channel MOSFET 100 V Enhancement, 3-Pin TO-252
- Toshiba Type N-Channel MOSFET 40 V Enhancement, 3-Pin TO-252