Infineon BSC040N08NS5 Type N-Channel MOSFET, 100 A, 80 V Enhancement, 8-Pin TDSON BSC040N08NS5ATMA1
- RS庫存編號:
- 171-1969
- 製造零件編號:
- BSC040N08NS5ATMA1
- 製造商:
- Infineon
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可享批量折扣
小計（1 包，共 10 件）*
TWD547.00
(不含稅)
TWD574.40
(含稅)
訂單超過 $1,300.00 免費送貨
有庫存
- 3,410 件準備從其他地點送貨
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單位 | 每單位 | 每包* |
|---|---|---|
| 10 - 1240 | TWD54.70 | TWD547.00 |
| 1250 - 2490 | TWD53.70 | TWD537.00 |
| 2500 + | TWD50.10 | TWD501.00 |
* 參考價格
- RS庫存編號:
- 171-1969
- 製造零件編號:
- BSC040N08NS5ATMA1
- 製造商:
- Infineon
規格
產品概覽和技術數據資料表
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產品詳細資訊
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選取全部 | 屬性 | 值 |
|---|---|---|
| 品牌 | Infineon | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 100A | |
| Maximum Drain Source Voltage Vds | 80V | |
| Series | BSC040N08NS5 | |
| Package Type | TDSON | |
| Mount Type | Surface | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance Rds | 5.7mΩ | |
| Channel Mode | Enhancement | |
| Maximum Power Dissipation Pd | 104W | |
| Typical Gate Charge Qg @ Vgs | 43nC | |
| Minimum Operating Temperature | -55°C | |
| Forward Voltage Vf | 0.88V | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Maximum Operating Temperature | 150°C | |
| Length | 5.49mm | |
| Height | 1.1mm | |
| Width | 6.35 mm | |
| Standards/Approvals | No | |
| Automotive Standard | No | |
| 選取全部 | ||
|---|---|---|
品牌 Infineon | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 100A | ||
Maximum Drain Source Voltage Vds 80V | ||
Series BSC040N08NS5 | ||
Package Type TDSON | ||
Mount Type Surface | ||
Pin Count 8 | ||
Maximum Drain Source Resistance Rds 5.7mΩ | ||
Channel Mode Enhancement | ||
Maximum Power Dissipation Pd 104W | ||
Typical Gate Charge Qg @ Vgs 43nC | ||
Minimum Operating Temperature -55°C | ||
Forward Voltage Vf 0.88V | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Maximum Operating Temperature 150°C | ||
Length 5.49mm | ||
Height 1.1mm | ||
Width 6.35 mm | ||
Standards/Approvals No | ||
Automotive Standard No | ||
The Infineon BSC040N08NS5 OptiMOS 5 80 V power MOSFET, especially designed for synchronous rectification for telecom and server power supplies. In addition, the device can also be utilized in other industrial applications such as solar, low voltage drives and adapter.
Highest system efficiency
Reduced switching and conduction losses
Less paralleling required
Increased power density
Low voltage overshoot
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