Infineon BSC070N10NS5 Type N-Channel MOSFET, 80 A, 80 V Enhancement, 8-Pin TDSON BSC070N10NS5ATMA1
- RS庫存編號:
- 171-1963
- 製造零件編號:
- BSC070N10NS5ATMA1
- 製造商:
- Infineon
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可享批量折扣
小計（1 包，共 10 件）*
TWD355.00
(不含稅)
TWD372.80
(含稅)
訂單超過 $1,300.00 免費送貨
有庫存
- 4,200 件準備從其他地點送貨
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單位 | 每單位 | 每包* |
|---|---|---|
| 10 - 1240 | TWD35.50 | TWD355.00 |
| 1250 - 2490 | TWD34.70 | TWD347.00 |
| 2500 + | TWD32.40 | TWD324.00 |
* 參考價格
- RS庫存編號:
- 171-1963
- 製造零件編號:
- BSC070N10NS5ATMA1
- 製造商:
- Infineon
規格
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產品詳細資訊
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選取全部 | 屬性 | 值 |
|---|---|---|
| 品牌 | Infineon | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 80A | |
| Maximum Drain Source Voltage Vds | 80V | |
| Series | BSC070N10NS5 | |
| Package Type | TDSON | |
| Mount Type | Surface | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance Rds | 10.2mΩ | |
| Channel Mode | Enhancement | |
| Typical Gate Charge Qg @ Vgs | 30nC | |
| Maximum Power Dissipation Pd | 83W | |
| Minimum Operating Temperature | -55°C | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Forward Voltage Vf | 0.9V | |
| Maximum Operating Temperature | 150°C | |
| Length | 5.49mm | |
| Height | 1.1mm | |
| Width | 6.35 mm | |
| Standards/Approvals | No | |
| Automotive Standard | No | |
| 選取全部 | ||
|---|---|---|
品牌 Infineon | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 80A | ||
Maximum Drain Source Voltage Vds 80V | ||
Series BSC070N10NS5 | ||
Package Type TDSON | ||
Mount Type Surface | ||
Pin Count 8 | ||
Maximum Drain Source Resistance Rds 10.2mΩ | ||
Channel Mode Enhancement | ||
Typical Gate Charge Qg @ Vgs 30nC | ||
Maximum Power Dissipation Pd 83W | ||
Minimum Operating Temperature -55°C | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Forward Voltage Vf 0.9V | ||
Maximum Operating Temperature 150°C | ||
Length 5.49mm | ||
Height 1.1mm | ||
Width 6.35 mm | ||
Standards/Approvals No | ||
Automotive Standard No | ||
The Infineon BSC070N10NS5 is the 100V OptiMOS 5 power MOSFET in TOLL. This MOSFET is optimized for synchronous rectification and Ideal for high switching frequency. This MOSFET have highest system efficiency and reduced switching and conduction losses.
Optimized for high performance SMPS
100% avalanche tested
Superior thermal resistance
N-channel
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