Infineon BSC030N08NS5 Type N-Channel MOSFET, 100 A, 80 V Enhancement, 8-Pin TDSON
- RS庫存編號:
- 170-2311
- 製造零件編號:
- BSC030N08NS5ATMA1
- 製造商:
- Infineon
此圖片僅供參考，請參閲產品詳細資訊及規格
可享批量折扣
小計（1 卷，共 5000 件）*
TWD166,000.00
(不含稅)
TWD174,300.00
(含稅)
訂單超過 $1,300.00 免費送貨
暫時缺貨
- 從 2026年10月01日 發貨
**需要更多嗎？**輸入您需要的數量，然後按一下「查看送貨日期」以查詢更多庫存和送貨詳細資訊。
單位 | 每單位 | 每卷* |
|---|---|---|
| 5000 - 20000 | TWD33.20 | TWD166,000.00 |
| 25000 + | TWD32.50 | TWD162,500.00 |
* 參考價格
- RS庫存編號:
- 170-2311
- 製造零件編號:
- BSC030N08NS5ATMA1
- 製造商:
- Infineon
規格
產品概覽和技術數據資料表
法例與合規
產品詳細資訊
透過選取一個或多個屬性來查找類似產品。
選取全部 | 屬性 | 值 |
|---|---|---|
| 品牌 | Infineon | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 100A | |
| Maximum Drain Source Voltage Vds | 80V | |
| Package Type | TDSON | |
| Series | BSC030N08NS5 | |
| Mount Type | Surface | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance Rds | 3mΩ | |
| Channel Mode | Enhancement | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Maximum Power Dissipation Pd | 139W | |
| Typical Gate Charge Qg @ Vgs | 61nC | |
| Minimum Operating Temperature | -55°C | |
| Forward Voltage Vf | 0.8V | |
| Maximum Operating Temperature | 150°C | |
| Width | 6.35 mm | |
| Standards/Approvals | No | |
| Length | 5.49mm | |
| Height | 1.1mm | |
| Automotive Standard | No | |
| 選取全部 | ||
|---|---|---|
品牌 Infineon | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 100A | ||
Maximum Drain Source Voltage Vds 80V | ||
Package Type TDSON | ||
Series BSC030N08NS5 | ||
Mount Type Surface | ||
Pin Count 8 | ||
Maximum Drain Source Resistance Rds 3mΩ | ||
Channel Mode Enhancement | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Maximum Power Dissipation Pd 139W | ||
Typical Gate Charge Qg @ Vgs 61nC | ||
Minimum Operating Temperature -55°C | ||
Forward Voltage Vf 0.8V | ||
Maximum Operating Temperature 150°C | ||
Width 6.35 mm | ||
Standards/Approvals No | ||
Length 5.49mm | ||
Height 1.1mm | ||
Automotive Standard No | ||
The Infineon BSC030N08NS5 is optiMOS 5 80 V power MOSFET, especially designed for synchronous rectification for telecom and server power supplies. In addition, the device can also be utilized in other industrial applications such as solar, low voltage drives and adapter.
Optimized for synchronous rectification
Ideal for high switching frequency
Output capacitance reduction of up to 44 %
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