N-Channel MOSFET, 98 A, 500 V, 3-Pin TO-264 IXYS IXFK98N50P3
- RS庫存編號:
- 168-4737
- 製造零件編號:
- IXFK98N50P3
- 製造商:
- IXYS
9 現貨庫存，可於6工作日發貨。
單價（不含稅） 毎管：25 個
TWD490.10
(不含稅)
TWD514.60
(含稅)
單位 | 每單位 | Per Tube* |
|---|---|---|
| 25 - 25 | TWD490.10 | TWD12,252.50 |
| 50 - 75 | TWD479.40 | TWD11,985.00 |
| 100 + | TWD468.80 | TWD11,720.00 |
* 參考價格
- RS庫存編號:
- 168-4737
- 製造零件編號:
- IXFK98N50P3
- 製造商:
- IXYS
產品概覽和技術數據資料表
法例與合規
- COO (Country of Origin):
- US
產品詳細資訊
N-channel Power MOSFET, IXYS HiperFET™ Polar3™ Series
A range of IXYS Polar3™ series N-channel Power MOSFETs with Fast Intrinsic Diode (HiPerFET™)
For products that are Customized and under Non-cancellable & Non-returnable, Sales & Conditions apply.
MOSFET Transistors, IXYS
A wide range of advanced discrete Power MOSFET devices from IXYS
規格
屬性 | 值 |
|---|---|
| Channel Type | N |
| Maximum Continuous Drain Current | 98 A |
| Maximum Drain Source Voltage | 500 V |
| Series | HiperFET, Polar3 |
| Package Type | TO-264 |
| Mounting Type | Through Hole |
| Pin Count | 3 |
| Maximum Drain Source Resistance | 50 mΩ |
| Channel Mode | Enhancement |
| Maximum Gate Threshold Voltage | 5V |
| Maximum Power Dissipation | 1.3 kW |
| Transistor Configuration | Single |
| Maximum Gate Source Voltage | -30 V, +30 V |
| Typical Gate Charge @ Vgs | 197 nC @ 10 V |
| Number of Elements per Chip | 1 |
| Maximum Operating Temperature | +150 °C |
| Width | 5.13mm |
| Length | 19.96mm |
| Transistor Material | Si |
| Height | 26.16mm |
| Minimum Operating Temperature | -55 °C |