Infineon OptiMOS Type N-Channel MOSFET, 30 A, 75 V Enhancement, 3-Pin TO-252
- RS庫存編號:
- 165-5971
- 製造零件編號:
- IPD30N08S2L21ATMA1
- 製造商:
- Infineon
此圖片僅供參考，請參閲產品詳細資訊及規格
可享批量折扣
小計（1 卷，共 2500 件）*
TWD62,750.00
(不含稅)
TWD65,900.00
(含稅)
訂單超過 $1,300.00 免費送貨
暫時缺貨
- 從 2026年4月02日 發貨
**需要更多嗎？**輸入您需要的數量，然後按一下「查看送貨日期」以查詢更多庫存和送貨詳細資訊。
單位 | 每單位 | 每卷* |
|---|---|---|
| 2500 - 10000 | TWD25.10 | TWD62,750.00 |
| 12500 + | TWD24.60 | TWD61,500.00 |
* 參考價格
- RS庫存編號:
- 165-5971
- 製造零件編號:
- IPD30N08S2L21ATMA1
- 製造商:
- Infineon
規格
產品概覽和技術數據資料表
法例與合規
產品詳細資訊
透過選取一個或多個屬性來查找類似產品。
選取全部 | 屬性 | 值 |
|---|---|---|
| 品牌 | Infineon | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 30A | |
| Maximum Drain Source Voltage Vds | 75V | |
| Series | OptiMOS | |
| Package Type | TO-252 | |
| Mount Type | Surface | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 26mΩ | |
| Channel Mode | Enhancement | |
| Typical Gate Charge Qg @ Vgs | 56nC | |
| Forward Voltage Vf | 0.9V | |
| Maximum Power Dissipation Pd | 136W | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Minimum Operating Temperature | -55°C | |
| Maximum Operating Temperature | 175°C | |
| Height | 2.41mm | |
| Length | 6.73mm | |
| Standards/Approvals | No | |
| Width | 6.22 mm | |
| Automotive Standard | AEC-Q101 | |
| 選取全部 | ||
|---|---|---|
品牌 Infineon | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 30A | ||
Maximum Drain Source Voltage Vds 75V | ||
Series OptiMOS | ||
Package Type TO-252 | ||
Mount Type Surface | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 26mΩ | ||
Channel Mode Enhancement | ||
Typical Gate Charge Qg @ Vgs 56nC | ||
Forward Voltage Vf 0.9V | ||
Maximum Power Dissipation Pd 136W | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Minimum Operating Temperature -55°C | ||
Maximum Operating Temperature 175°C | ||
Height 2.41mm | ||
Length 6.73mm | ||
Standards/Approvals No | ||
Width 6.22 mm | ||
Automotive Standard AEC-Q101 | ||
不適用
- COO (Country of Origin):
- CN
Infineon OptiMOS™ Power MOSFET Family
OptiMOS™ products are available in high performance packages to tackle the most challenging applications giving full flexibility in limited spaces. These Infineon products are designed to meet and exceed the energy efficiency and power density requirements of the sharpened next generation voltage regulation standards in computing applications.
N-channel - Enhancement mode
Automotive AEC Q101 qualified
MSL1 up to 260°C Peak reflow
175°C operating temperature
Green package (lead free)
Ultra low Rds(on)
MOSFET Transistors, Infineon
Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.
相關連結
- Infineon OptiMOS Type N-Channel MOSFET 75 V Enhancement, 3-Pin TO-252 IPD30N08S2L21ATMA1
- Infineon OptiMOS Type N-Channel MOSFET 60 V Enhancement, 3-Pin TO-252
- Infineon OptiMOS Type N-Channel MOSFET 55 V Enhancement, 3-Pin TO-252
- Infineon OptiMOS Type N-Channel MOSFET 100 V Enhancement, 3-Pin TO-252
- Infineon OptiMOS Type N-Channel MOSFET 55 V Enhancement, 3-Pin TO-252
- Infineon OptiMOS Type N-Channel MOSFET 55 V Enhancement, 3-Pin TO-252
- Infineon OptiMOS Type N-Channel MOSFET 55 V Enhancement, 3-Pin TO-252
- Infineon OptiMOS Type N-Channel MOSFET 60 V Enhancement, 3-Pin TO-252 IPD50N06S409ATMA2