Infineon OptiMOS Type N-Channel MOSFET, 30 A, 75 V Enhancement, 3-Pin TO-252
- RS庫存編號:
- 165-5971
- 製造零件編號:
- IPD30N08S2L21ATMA1
- 製造商:
- Infineon
此圖片僅供參考，請參閲產品詳細資訊及規格
可享批量折扣
查看批量定價選項小計（1 卷，共 2500 件）*
TWD69,000.00
(不含稅)
TWD72,450.00
(含稅)
訂單超過 $1,300.00 免費送貨
暫時缺貨
- 從 2026年11月09日 發貨
**需要更多嗎？**輸入您需要的數量，然後按一下「查看送貨日期」以查詢更多庫存和送貨詳細資訊。
單位 | 每單位 | 每卷* |
|---|---|---|
| 2500 - 10000 | TWD27.60 | TWD69,000.00 |
| 12500 + | TWD27.00 | TWD67,500.00 |
* 參考價格
- RS庫存編號:
- 165-5971
- 製造零件編號:
- IPD30N08S2L21ATMA1
- 製造商:
- Infineon
規格
產品概覽和技術數據資料表
法例與合規
產品詳細資訊
透過選取一個或多個屬性來查找類似產品。
選取全部 | 屬性 | 值 |
|---|---|---|
| 品牌 | Infineon | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 30A | |
| Maximum Drain Source Voltage Vds | 75V | |
| Series | OptiMOS | |
| Package Type | TO-252 | |
| Mount Type | Surface | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 26mΩ | |
| Channel Mode | Enhancement | |
| Typical Gate Charge Qg @ Vgs | 56nC | |
| Minimum Operating Temperature | -55°C | |
| Forward Voltage Vf | 0.9V | |
| Maximum Power Dissipation Pd | 136W | |
| Maximum Operating Temperature | 175°C | |
| Standards/Approvals | No | |
| Height | 2.41mm | |
| Length | 6.73mm | |
| Automotive Standard | AEC-Q101 | |
| 選取全部 | ||
|---|---|---|
品牌 Infineon | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 30A | ||
Maximum Drain Source Voltage Vds 75V | ||
Series OptiMOS | ||
Package Type TO-252 | ||
Mount Type Surface | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 26mΩ | ||
Channel Mode Enhancement | ||
Typical Gate Charge Qg @ Vgs 56nC | ||
Minimum Operating Temperature -55°C | ||
Forward Voltage Vf 0.9V | ||
Maximum Power Dissipation Pd 136W | ||
Maximum Operating Temperature 175°C | ||
Standards/Approvals No | ||
Height 2.41mm | ||
Length 6.73mm | ||
Automotive Standard AEC-Q101 | ||
不適用
- COO (Country of Origin):
- CN
Infineon OptiMOS Series MOSFET, 75V Maximum Drain Source Voltage, 30A Maximum Continuous Drain Current - IPD30N08S2L21ATMA1
This MOSFET is a power switching transistor designed for demanding electronic systems, providing controlled conduction between drain and source in N-channel enhancement-mode configurations. It is intended for surface-mount assembly in compact power designs and for use where elevated operating temperatures and automotive-grade qualification are required.
Features and Benefits:
• 75V drain voltage enabling robust high-voltage switching
• 30A continuous current supporting substantial load delivery
• 26mΩ low Rds(on) reducing conduction losses
• 136W dissipation capacity aiding thermal margin in designs
• 56nC typical gate charge improving switching speed control
• ±20V gate tolerance allowing flexible gate-drive schemes
• 30A continuous current supporting substantial load delivery
• 26mΩ low Rds(on) reducing conduction losses
• 136W dissipation capacity aiding thermal margin in designs
• 56nC typical gate charge improving switching speed control
• ±20V gate tolerance allowing flexible gate-drive schemes
Applications
• Suitable for automotive DC-DC converter stages
• Ideal for synchronous rectification in power supplies
• Used with motor-drive inverter front-end circuits
• Can be used for high-efficiency point-of-load converters
• Suitable for board-level power management in vehicles
• Ideal for synchronous rectification in power supplies
• Used with motor-drive inverter front-end circuits
• Can be used for high-efficiency point-of-load converters
• Suitable for board-level power management in vehicles
What packaging type should designers expect for PCB layout?
The device is supplied in a TO-252 package intended for surface mounting, which affects land-pattern and thermal-pad design.
How does the device handle extreme ambient conditions?
It is rated to operate across a wide temperature span from -55°C up to 175°C to suit high-temperature environments.
What gate-drive considerations are required for control circuitry?
The maximum gate-source rating is ±20V
gate-drive circuits should limit excursions within this range and account for the 56nC typical gate charge when sizing drivers.
Are there specific thermal performance constraints to plan for?
With a maximum power dissipation of 136W, thermal management must consider conduction paths and board-level heat sinking to maintain junction limits.
相關連結
- Infineon OptiMOS Type N-Channel MOSFET 75 V Enhancement, 3-Pin TO-252 IPD30N08S2L21ATMA1
- Infineon OptiMOS Type N-Channel MOSFET 60 V Enhancement, 3-Pin TO-252
- Infineon OptiMOS Type N-Channel MOSFET 100 V Enhancement, 3-Pin TO-252
- Infineon OptiMOS Type N-Channel MOSFET 55 V Enhancement, 3-Pin TO-252
- Infineon OptiMOS Type N-Channel MOSFET 55 V Enhancement, 3-Pin TO-252
- Infineon OptiMOS Type N-Channel MOSFET 55 V Enhancement, 3-Pin TO-252
- Infineon OptiMOS Type N-Channel MOSFET 55 V Enhancement, 3-Pin TO-252
- Infineon OptiMOS Type N-Channel MOSFET 55 V Enhancement, 3-Pin TO-252 IPD30N06S215ATMA2