Nexperia Type N-Channel MOSFET, 6.3 A, 20 V Enhancement, 3-Pin SOT-23 PMV20XNEAR
- RS庫存編號:
- 153-0781
- 製造零件編號:
- PMV20XNEAR
- 製造商:
- Nexperia
此圖片僅供參考，請參閲產品詳細資訊及規格
可享批量折扣
小計（1 包，共 25 件）*
TWD262.50
(不含稅)
TWD275.50
(含稅)
訂單超過 $1,300.00 免費送貨
暫時缺貨
- 5,900 件從 2026年5月20日 起裝運發貨
**需要更多嗎？**輸入您需要的數量，然後按一下「查看送貨日期」以查詢更多庫存和送貨詳細資訊。
單位 | 每單位 | 每包* |
|---|---|---|
| 25 - 725 | TWD10.50 | TWD262.50 |
| 750 - 1475 | TWD10.30 | TWD257.50 |
| 1500 + | TWD10.10 | TWD252.50 |
* 參考價格
- RS庫存編號:
- 153-0781
- 製造零件編號:
- PMV20XNEAR
- 製造商:
- Nexperia
規格
產品概覽和技術數據資料表
法例與合規
產品詳細資訊
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選取全部 | 屬性 | 值 |
|---|---|---|
| 品牌 | Nexperia | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 6.3A | |
| Maximum Drain Source Voltage Vds | 20V | |
| Package Type | SOT-23 | |
| Mount Type | Surface | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 34mΩ | |
| Channel Mode | Enhancement | |
| Maximum Gate Source Voltage Vgs | 12 V | |
| Maximum Power Dissipation Pd | 6.94W | |
| Typical Gate Charge Qg @ Vgs | 9.9nC | |
| Minimum Operating Temperature | -55°C | |
| Maximum Operating Temperature | 150°C | |
| Standards/Approvals | No | |
| Length | 3mm | |
| Height | 1mm | |
| Width | 1.4 mm | |
| Automotive Standard | AEC-Q101 | |
| 選取全部 | ||
|---|---|---|
品牌 Nexperia | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 6.3A | ||
Maximum Drain Source Voltage Vds 20V | ||
Package Type SOT-23 | ||
Mount Type Surface | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 34mΩ | ||
Channel Mode Enhancement | ||
Maximum Gate Source Voltage Vgs 12 V | ||
Maximum Power Dissipation Pd 6.94W | ||
Typical Gate Charge Qg @ Vgs 9.9nC | ||
Minimum Operating Temperature -55°C | ||
Maximum Operating Temperature 150°C | ||
Standards/Approvals No | ||
Length 3mm | ||
Height 1mm | ||
Width 1.4 mm | ||
Automotive Standard AEC-Q101 | ||
20 V, N-channel Trench MOSFET, N-channel enhancement mode Field-Effect Transistor (FET) in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.
Low threshold voltage
Very fast switching
Trench MOSFET technology
ElectroStatic Discharge (ESD) protection > 2 kV HBM
AEC-Q101 qualified
Relay driver
High-speed line driver
Low-side loadswitch
Switching circuits
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