Vishay IRFU420 Type N-Channel Power MOSFET, 2.4 A, 500 V Enhancement, 3-Pin IPAK
- RS庫存編號:
- 146-4434
- 製造零件編號:
- IRFU420PBF
- 製造商:
- Vishay
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可享批量折扣
查看批量定價選項小計（1 卷，共 3000 件）*
TWD114,900.00
(不含稅)
TWD120,660.00
(含稅)
訂單超過 $1,300.00 免費送貨
暫時缺貨
- 從 2027年2月15日 發貨
**需要更多嗎？**輸入您需要的數量，然後按一下「查看送貨日期」以查詢更多庫存和送貨詳細資訊。
單位 | 每單位 | 每卷* |
|---|---|---|
| 3000 - 3000 | TWD38.30 | TWD114,900.00 |
| 6000 + | TWD37.50 | TWD112,500.00 |
* 參考價格
- RS庫存編號:
- 146-4434
- 製造零件編號:
- IRFU420PBF
- 製造商:
- Vishay
規格
產品概覽和技術數據資料表
法例與合規
產品詳細資訊
透過選取一個或多個屬性來查找類似產品。
選取全部 | 屬性 | 值 |
|---|---|---|
| 品牌 | Vishay | |
| Product Type | Power MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 2.4A | |
| Maximum Drain Source Voltage Vds | 500V | |
| Package Type | IPAK | |
| Series | IRFU420 | |
| Mount Type | Surface | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 3Ω | |
| Channel Mode | Enhancement | |
| Maximum Power Dissipation Pd | 42W | |
| Forward Voltage Vf | 1.6V | |
| Maximum Gate Source Voltage Vgs | 20V | |
| Typical Gate Charge Qg @ Vgs | 19nC | |
| Minimum Operating Temperature | -55°C | |
| Maximum Operating Temperature | 150°C | |
| Standards/Approvals | RoHS | |
| Width | 6.22mm | |
| Length | 6.73mm | |
| Height | 2.39mm | |
| Automotive Standard | No | |
| 選取全部 | ||
|---|---|---|
品牌 Vishay | ||
Product Type Power MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 2.4A | ||
Maximum Drain Source Voltage Vds 500V | ||
Package Type IPAK | ||
Series IRFU420 | ||
Mount Type Surface | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 3Ω | ||
Channel Mode Enhancement | ||
Maximum Power Dissipation Pd 42W | ||
Forward Voltage Vf 1.6V | ||
Maximum Gate Source Voltage Vgs 20V | ||
Typical Gate Charge Qg @ Vgs 19nC | ||
Minimum Operating Temperature -55°C | ||
Maximum Operating Temperature 150°C | ||
Standards/Approvals RoHS | ||
Width 6.22mm | ||
Length 6.73mm | ||
Height 2.39mm | ||
Automotive Standard No | ||
Vishay IRFU420 Series Power MOSFET, 500V Maximum Drain Source Voltage, 2.4A Maximum Continuous Drain Current - IRFU420PBF
This power MOSFET is a high-voltage switching transistor designed for surface-mounted power conversion and control tasks in industrial systems. It operates as an N-channel enhancement-mode device suited to applications requiring elevated drain-source voltage handling and moderate continuous current, with an IPAK 3-pin package intended for Compact board-level integration.
Features and Benefits:
• 500V drain-source withstand for high-voltage switching capability • 3 Ω RDS(on) for predictable on-state conduction losses • 2.4 A continuous drain current for sustained load operation • 19 nC typical gate charge to aid switching energy estimation • 42W maximum power dissipation for thermal design margin • -55 °C to 150 °C operating range for wide thermal environments
Applications
• Suitable for industrial motor-drive gate switching stages • Ideal for high-voltage switch-mode power supplies • Used for line-voltage protection and snubber circuits • Can be used in automation control relays and drivers
What gate voltage limits should be observed during design?
Keep gate excursions within ±20V relative to source to prevent gate-oxide overstress and ensure long-term switching reliability.
How should thermal constraints be managed on the PCB?
Use adequate copper area and thermal vias to dissipate up to 42 W, and evaluate junction-to-ambient resistance for your cooling strategy.
What switching performance considerations arise from the gate charge?
Budget driver current and slew rates around the 19 nC gate charge Value to control switching losses and electromagnetic emissions during transitions.
Are there specific mounting recommendations for reliable operation?
As a surface-mount IPAK device, ensure secure solder joints and an appropriate footprint for heat spreading to maintain temperature within the -55 °C to 150 °C operational band.
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