Vishay IRFU1N60A Type N-Channel Power MOSFET, 1.4 A, 600 V Enhancement, 3-Pin IPAK IRFU1N60APBF
- RS庫存編號:
- 145-1664
- 製造零件編號:
- IRFU1N60APBF
- 製造商:
- Vishay
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查看批量定價選項小計（1 管，共 75 件）*
TWD1,995.00
(不含稅)
TWD2,094.75
(含稅)
訂單超過 $1,300.00 免費送貨
有庫存
- 加上 525 件從 2026年6月29日 起發貨
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單位 | 每單位 | 每管* |
|---|---|---|
| 75 - 75 | TWD26.60 | TWD1,995.00 |
| 150 - 225 | TWD25.80 | TWD1,935.00 |
| 300 + | TWD25.10 | TWD1,882.50 |
* 參考價格
- RS庫存編號:
- 145-1664
- 製造零件編號:
- IRFU1N60APBF
- 製造商:
- Vishay
規格
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產品詳細資訊
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選取全部 | 屬性 | 值 |
|---|---|---|
| 品牌 | Vishay | |
| Channel Type | Type N | |
| Product Type | Power MOSFET | |
| Maximum Continuous Drain Current Id | 1.4A | |
| Maximum Drain Source Voltage Vds | 600V | |
| Series | IRFU1N60A | |
| Package Type | IPAK | |
| Mount Type | Through Hole | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 7Ω | |
| Channel Mode | Enhancement | |
| Maximum Gate Source Voltage Vgs | 30V | |
| Minimum Operating Temperature | -55°C | |
| Maximum Power Dissipation Pd | 36W | |
| Forward Voltage Vf | 1.6V | |
| Typical Gate Charge Qg @ Vgs | 14nC | |
| Maximum Operating Temperature | 150°C | |
| Width | 2.39mm | |
| Height | 6.22mm | |
| Length | 6.73mm | |
| Standards/Approvals | RoHS | |
| Automotive Standard | No | |
| 選取全部 | ||
|---|---|---|
品牌 Vishay | ||
Channel Type Type N | ||
Product Type Power MOSFET | ||
Maximum Continuous Drain Current Id 1.4A | ||
Maximum Drain Source Voltage Vds 600V | ||
Series IRFU1N60A | ||
Package Type IPAK | ||
Mount Type Through Hole | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 7Ω | ||
Channel Mode Enhancement | ||
Maximum Gate Source Voltage Vgs 30V | ||
Minimum Operating Temperature -55°C | ||
Maximum Power Dissipation Pd 36W | ||
Forward Voltage Vf 1.6V | ||
Typical Gate Charge Qg @ Vgs 14nC | ||
Maximum Operating Temperature 150°C | ||
Width 2.39mm | ||
Height 6.22mm | ||
Length 6.73mm | ||
Standards/Approvals RoHS | ||
Automotive Standard No | ||
- COO (Country of Origin):
- MY
Vishay IRFU1N60A Series Power MOSFET, 600V Drain-Source Voltage, 36W Power Dissipation - IRFU1N60APBF
This power MOSFET is a high-voltage N-channel switching device designed for power conversion and control tasks in industrial electronic systems. It is suitable for through-hole board assembly and offers conservative operating limits for demanding environments where high voltage and thermal endurance are required.
Features and Benefits:
• 600V drain rating enables operation in high-voltage circuits
• 1.4 A continuous drain current permits light to moderate load handling
• 7 Ω RDS(on) provides predictable conduction characteristics
• 14 nC typical gate charge supports lower switching losses
• 36W power dissipation allows sustained power handling at elevated temperatures
• 150 °C maximum junction temperature supports high-temperature operation
• 1.4 A continuous drain current permits light to moderate load handling
• 7 Ω RDS(on) provides predictable conduction characteristics
• 14 nC typical gate charge supports lower switching losses
• 36W power dissipation allows sustained power handling at elevated temperatures
• 150 °C maximum junction temperature supports high-temperature operation
Applications
• Suitable for switch-mode power supplies in industrial automation equipment
• Ideal for high-voltage power transistor roles in motor-control interfaces
• Used for auxiliary power conversion in electrical distribution modules
• Can be used for signal switching in instrumentation requiring through-hole parts
• Ideal for high-voltage power transistor roles in motor-control interfaces
• Used for auxiliary power conversion in electrical distribution modules
• Can be used for signal switching in instrumentation requiring through-hole parts
What gate-drive considerations should I allow for?
Drive circuitry should accommodate a maximum gate-source rating of 30V and provide sufficient drive current to charge the 14 nC gate for the intended switching speed.
How does the package affect mounting and thermal handling?
The three-pin IPAK through-hole package facilitates robust soldered connections and a mounting style that can aid heat transfer to a copper plane or heatsink arrangement.
What ambient temperature range is supported for deployment?
The device operates across a temperature span from -55 °C to a maximum of 150 °C
thermal management is required to keep the junction temperature below the limit.
Are there any environmental or regulatory attributes to note?
The component meets RoHS criteria for restricted substances and is not specified as meeting automotive standards.
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