Infineon OptiMOS FD Type N-Channel MOSFET, 61 A, 250 V Enhancement, 3-Pin TO-220
- RS庫存編號:
- 145-8744
- 製造零件編號:
- IPP220N25NFDAKSA1
- 製造商:
- Infineon
此圖片僅供參考,請參閲產品詳細資訊及規格
可享批量折扣
小計(1 管,共 50 件)*
TWD5,935.00
(不含稅)
TWD6,232.00
(含稅)
訂單超過 $1,300.00 免費送貨
有庫存
- 450 件準備從其他地點送貨
**需要更多嗎?**輸入您需要的數量,然後按一下「查看送貨日期」以查詢更多庫存和送貨詳細資訊。
單位 | 每單位 | 每管* |
|---|---|---|
| 50 - 200 | TWD118.70 | TWD5,935.00 |
| 250 + | TWD116.30 | TWD5,815.00 |
* 參考價格
- RS庫存編號:
- 145-8744
- 製造零件編號:
- IPP220N25NFDAKSA1
- 製造商:
- Infineon
規格
產品概覽和技術數據資料表
法例與合規
產品詳細資訊
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選取全部 | 屬性 | 值 |
|---|---|---|
| 品牌 | Infineon | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 61A | |
| Maximum Drain Source Voltage Vds | 250V | |
| Package Type | TO-220 | |
| Series | OptiMOS FD | |
| Mount Type | Through Hole | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 22mΩ | |
| Channel Mode | Enhancement | |
| Typical Gate Charge Qg @ Vgs | 65nC | |
| Maximum Power Dissipation Pd | 300W | |
| Forward Voltage Vf | 1.2V | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Minimum Operating Temperature | -55°C | |
| Maximum Operating Temperature | 175°C | |
| Standards/Approvals | No | |
| Width | 4.57 mm | |
| Length | 10.36mm | |
| Height | 15.95mm | |
| Automotive Standard | No | |
| 選取全部 | ||
|---|---|---|
品牌 Infineon | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 61A | ||
Maximum Drain Source Voltage Vds 250V | ||
Package Type TO-220 | ||
Series OptiMOS FD | ||
Mount Type Through Hole | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 22mΩ | ||
Channel Mode Enhancement | ||
Typical Gate Charge Qg @ Vgs 65nC | ||
Maximum Power Dissipation Pd 300W | ||
Forward Voltage Vf 1.2V | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Minimum Operating Temperature -55°C | ||
Maximum Operating Temperature 175°C | ||
Standards/Approvals No | ||
Width 4.57 mm | ||
Length 10.36mm | ||
Height 15.95mm | ||
Automotive Standard No | ||
不適用
- COO (Country of Origin):
- CN
Infineon OptiMOS FD Series MOSFET, 61A Maximum Continuous Drain Current, 300W Maximum Power Dissipation - IPP220N25NFDAKSA1
This MOSFET is designed for high-performance applications that require efficient power management. With its N-channel enhancement mode configuration and robust specifications, it plays an essential role in sectors such as automation, electronics, and electrical systems. It offers a maximum continuous drain current of 61A and a breakdown voltage of 250V, providing reliability and thermal performance in challenging environments.
Features & Benefits
• Low on-resistance increases energy efficiency during operation
• High current capability supports a range of applications
• Elevated operating temperature of up to +175°C enhances versatility
• Optimised for hard commutation, contributing to ruggedness and durability
• Compliant with RoHS and halogen-free regulations, promoting eco-friendliness
• Efficient gate charge characteristics ensure effective switching
Applications
• Used in power conversion circuits for automation equipment
• Ideal for high-power motor drives in industrial machinery
• Commonly applied in power supplies for electronic devices
• Suitable for automotive power management systems
• Employed in renewable energy systems for inverters
What is the maximum power dissipation capacity?
It can handle a maximum power dissipation of 300W, ensuring performance in high load scenarios.
How does it perform in high-temperature environments?
This MOSFET can operate continuously at temperatures reaching +175°C, suitable for extreme conditions.
Can it handle pulsed drain currents?
Yes, the device can manage pulsed drain currents up to 244A, beneficial for transient load applications.
What is the significance of its low Rds(on) value?
A low Rds(on) of 22mΩ reduces power loss and increases efficiency during operation, Crucial for energy-sensitive applications.
How should it be mounted for optimal performance?
The device features a TO-220 package and is designed for through-hole mounting, which aids thermal management in circuit designs.
相關連結
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