Infineon OptiMOS FD Type N-Channel MOSFET, 84 A, 200 V Enhancement, 3-Pin TO-263 IPB117N20NFDATMA1

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包裝方式:
RS庫存編號:
110-7458
製造零件編號:
IPB117N20NFDATMA1
製造商:
Infineon
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品牌

Infineon

Product Type

MOSFET

Channel Type

Type N

Maximum Continuous Drain Current Id

84A

Maximum Drain Source Voltage Vds

200V

Package Type

TO-263

Series

OptiMOS FD

Mount Type

Surface

Pin Count

3

Maximum Drain Source Resistance Rds

11.7mΩ

Channel Mode

Enhancement

Typical Gate Charge Qg @ Vgs

65nC

Minimum Operating Temperature

-55°C

Maximum Power Dissipation Pd

300W

Maximum Gate Source Voltage Vgs

20 V

Forward Voltage Vf

1.2V

Maximum Operating Temperature

170°C

Length

10.31mm

Width

9.45 mm

Height

4.57mm

Standards/Approvals

IEC61249-2-21, JEDEC, Pb-free lead plating, RoHS

Automotive Standard

No

不適用

Infineon OptiMOS™ FD Power MOSFET


MOSFET Transistors, Infineon


Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.

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