IXYS Trench Type N-Channel MOSFET, 110 A, 250 V Enhancement, 3-Pin TO-247 IXTH110N25T

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TWD313.00

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TWD328.65

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RS庫存編號:
125-8047
Distrelec 貨號:
302-53-421
製造零件編號:
IXTH110N25T
製造商:
IXYS
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品牌

IXYS

Product Type

MOSFET

Channel Type

Type N

Maximum Continuous Drain Current Id

110A

Maximum Drain Source Voltage Vds

250V

Series

Trench

Package Type

TO-247

Mount Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance Rds

24mΩ

Channel Mode

Enhancement

Maximum Gate Source Voltage Vgs

20 V

Forward Voltage Vf

1.2V

Maximum Power Dissipation Pd

694W

Typical Gate Charge Qg @ Vgs

157nC

Minimum Operating Temperature

-55°C

Maximum Operating Temperature

150°C

Length

16.26mm

Height

21.46mm

Width

5.3 mm

Standards/Approvals

No

Automotive Standard

No

N-Channel Trench-Gate Power MOSFET, IXYS


Trench Gate MOSFET Technology

Low on-state Resistance RDS(on)

Superior avalanche ruggedness

MOSFET Transistors, IXYS


A wide range of Advanced discrete Power MOSFET devices from IXYS

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