STMicroelectronics N Channel Mosfet STH4N150 N channel-Channel Power MOSFET, 2.6 A, 1500 V MOSFET, 3-Pin H2PAK-2
- RS庫存編號:
- 877-308
- 製造零件編號:
- STH4N150-2AG
- 製造商:
- STMicroelectronics
N
此圖片僅供參考，請參閲產品詳細資訊及規格
小計（1 卷，共 1000 件）*
TWD91,700.00
(不含稅)
TWD96,280.00
(含稅)
訂單超過 $1,300.00 免費送貨
暫時缺貨
- 從 2026年12月21日 發貨
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單位 | 每單位 | 每卷* |
|---|---|---|
| 1000 + | TWD91.70 | TWD91,700.00 |
* 參考價格
- RS庫存編號:
- 877-308
- 製造零件編號:
- STH4N150-2AG
- 製造商:
- STMicroelectronics
規格
產品概覽和技術數據資料表
法例與合規
產品詳細資訊
透過選取一個或多個屬性來查找類似產品。
選取全部 | 屬性 | 值 |
|---|---|---|
| 品牌 | STMicroelectronics | |
| Channel Type | N channel | |
| Product Type | Power MOSFET | |
| Maximum Continuous Drain Current Id | 2.6A | |
| Maximum Drain Source Voltage Vds | 1500V | |
| Package Type | H2PAK-2 | |
| Series | STH4N150 | |
| Mount Type | Surface Mount | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 10Ω | |
| Channel Mode | MOSFET | |
| Maximum Power Dissipation Pd | 208W | |
| Typical Gate Charge Qg @ Vgs | 35.1nC | |
| Minimum Operating Temperature | -55°C | |
| Maximum Gate Source Voltage Vgs | 30V | |
| Transistor Configuration | N Channel Mosfet | |
| Maximum Operating Temperature | 150°C | |
| Width | 4.7mm | |
| Length | 10.4mm | |
| Height | 15.8mm | |
| Automotive Standard | AEC-Q101 | |
| 選取全部 | ||
|---|---|---|
品牌 STMicroelectronics | ||
Channel Type N channel | ||
Product Type Power MOSFET | ||
Maximum Continuous Drain Current Id 2.6A | ||
Maximum Drain Source Voltage Vds 1500V | ||
Package Type H2PAK-2 | ||
Series STH4N150 | ||
Mount Type Surface Mount | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 10Ω | ||
Channel Mode MOSFET | ||
Maximum Power Dissipation Pd 208W | ||
Typical Gate Charge Qg @ Vgs 35.1nC | ||
Minimum Operating Temperature -55°C | ||
Maximum Gate Source Voltage Vgs 30V | ||
Transistor Configuration N Channel Mosfet | ||
Maximum Operating Temperature 150°C | ||
Width 4.7mm | ||
Length 10.4mm | ||
Height 15.8mm | ||
Automotive Standard AEC-Q101 | ||
- COO (Country of Origin):
- CN
The STMicroelectronics N-channel Power MOSFET developed by using the PowerMESH technology. This device is designed to ensure a high level of voltage and robustness for the automotive market.
Very low gate charge
100% avalanche tested
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