STMicroelectronics MDmesh K5 Type N-Channel MOSFET, 21 A, 1200 V Enhancement, 3-Pin H2PAK-2 STH13N120K5-2AG

此圖片僅供參考，請參閲產品詳細資訊及規格

查看所有MOSFETs

小計（1 卷，共 1000 件）*

TWD260,200.00

(不含稅)

TWD273,210.00

(含稅)

Add to Basket
選擇或輸入數量
暫時缺貨
  • 從 2026年5月04日 發貨
**需要更多嗎？**輸入您需要的數量，然後按一下「查看送貨日期」以查詢更多庫存和送貨詳細資訊。
單位
每單位
每卷*
1000 +TWD260.20TWD260,200.00

* 參考價格

RS庫存編號:
151-913
製造零件編號:
STH13N120K5-2AG
製造商:
STMicroelectronics
透過選取一個或多個屬性來查找類似產品。
選取全部

品牌

STMicroelectronics

Channel Type

Type N

Product Type

MOSFET

Maximum Continuous Drain Current Id

21A

Maximum Drain Source Voltage Vds

1200V

Series

MDmesh K5

Package Type

H2PAK-2

Mount Type

Surface

Pin Count

3

Maximum Drain Source Resistance Rds

0.69Ω

Channel Mode

Enhancement

Minimum Operating Temperature

-55°C

Typical Gate Charge Qg @ Vgs

44.2nC

Maximum Gate Source Voltage Vgs

±30 V

Forward Voltage Vf

1.5V

Maximum Operating Temperature

150°C

Width

10.4 mm

Length

15.8mm

Standards/Approvals

RoHS

Height

4.7mm

Automotive Standard

No

COO (Country of Origin):
CN
The STMicroelectronics Power MOSFET is designed using MDmesh K5 technology based on an innovative proprietary vertical structure. The result is a dramatic reduction in on resistance and ultra low gate charge for applications requiring superior power density and high efficiency.

AEC Q101 qualified

Industry’s lowest RDS(on) x area

Industry’s best FoM

Ultra low gate charge

100% avalanche tested

Zener protected

相關連結