STMicroelectronics MDmesh K5 Type N-Channel MOSFET, 1.5 A, 1200 V Enhancement, 3-Pin H2PAK-2 STH2N120K5-2AG

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包裝方式：
RS庫存編號:
151-438
製造零件編號:
STH2N120K5-2AG
製造商:
STMicroelectronics
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品牌

STMicroelectronics

Channel Type

Type N

Product Type

MOSFET

Maximum Continuous Drain Current Id

1.5A

Maximum Drain Source Voltage Vds

1200V

Series

MDmesh K5

Package Type

H2PAK-2

Mount Type

Surface

Pin Count

3

Maximum Drain Source Resistance Rds

10Ω

Channel Mode

Enhancement

Maximum Gate Source Voltage Vgs

±30 V

Forward Voltage Vf

1.5V

Typical Gate Charge Qg @ Vgs

5.3nC

Minimum Operating Temperature

-55°C

Maximum Operating Temperature

150°C

Width

10.4 mm

Standards/Approvals

RoHS

Length

15.8mm

Height

4.7mm

Automotive Standard

No

COO (Country of Origin):
CN
The STMicroelectronics Power MOSFET is designed using MDmesh K5 technology based on an innovative proprietary vertical structure. The result is a dramatic reduction in on resistance and ultra low gate charge for applications requiring superior power density and high efficiency.

AEC Q101 qualified

Industry’s lowest RDS(on) x area

Industry’s best FoM

Ultra low gate charge

100% avalanche tested

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