Vishay SQJ N-Channel Single MOSFETs, 100 A, 60 V Enhancement Mode, 8-Pin P SQJ766EP-T1_GE3
- RS庫存編號:
- 829-354
- 製造零件編號:
- SQJ766EP-T1_GE3
- 製造商:
- Vishay
N
可享批量折扣
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TWD80.00
(不含稅)
TWD84.00
(含稅)
訂單超過 $1,300.00 免費送貨
暫時缺貨
- 從 2027年5月18日 發貨
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單位 | 每單位 |
|---|---|
| 1 - 9 | TWD80.00 |
| 10 - 24 | TWD52.00 |
| 25 - 99 | TWD31.00 |
| 100 - 499 | TWD30.00 |
| 500 + | TWD29.00 |
* 參考價格
- RS庫存編號:
- 829-354
- 製造零件編號:
- SQJ766EP-T1_GE3
- 製造商:
- Vishay
規格
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選取全部 | 屬性 | 值 |
|---|---|---|
| 品牌 | Vishay | |
| Channel Type | N | |
| Product Type | Single MOSFETs | |
| Maximum Continuous Drain Current Id | 100A | |
| Maximum Drain Source Voltage Vds | 60V | |
| Package Type | P | |
| Series | SQJ | |
| Mount Type | Surface Mount | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance Rds | 0.0046Ω | |
| Channel Mode | Enhancement Mode | |
| Maximum Power Dissipation Pd | 93W | |
| Forward Voltage Vf | 1.2V | |
| Maximum Gate Source Voltage Vgs | 20V | |
| Typical Gate Charge Qg @ Vgs | 31nC | |
| Minimum Operating Temperature | -55°C | |
| Maximum Operating Temperature | 175°C | |
| Height | 1.04mm | |
| Width | 4.9mm | |
| Standards/Approvals | RoHS Compliant | |
| Length | 6.15mm | |
| Automotive Standard | No | |
| 選取全部 | ||
|---|---|---|
品牌 Vishay | ||
Channel Type N | ||
Product Type Single MOSFETs | ||
Maximum Continuous Drain Current Id 100A | ||
Maximum Drain Source Voltage Vds 60V | ||
Package Type P | ||
Series SQJ | ||
Mount Type Surface Mount | ||
Pin Count 8 | ||
Maximum Drain Source Resistance Rds 0.0046Ω | ||
Channel Mode Enhancement Mode | ||
Maximum Power Dissipation Pd 93W | ||
Forward Voltage Vf 1.2V | ||
Maximum Gate Source Voltage Vgs 20V | ||
Typical Gate Charge Qg @ Vgs 31nC | ||
Minimum Operating Temperature -55°C | ||
Maximum Operating Temperature 175°C | ||
Height 1.04mm | ||
Width 4.9mm | ||
Standards/Approvals RoHS Compliant | ||
Length 6.15mm | ||
Automotive Standard No | ||
- COO (Country of Origin):
- CN
The Vishay high-performance automotive dual N-Channel MOSFET designed for demanding applications. It delivers robust efficiency and reliability in various electronic systems.
TrenchFET Gen IV technology ensures efficient performance
AEC-Q101 qualified for automotive applications
100% R and UIS tested for reliability
Low on-state resistance reduces energy loss
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