Vishay SQS201CENW Type P-Channel Single MOSFETs, -16 A, 100 V Enhancement, 8-Pin PowerPAK SQS201CENW-T1_GE3
- RS庫存編號:
- 653-188
- 製造零件編號:
- SQS201CENW-T1_GE3
- 製造商:
- Vishay
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此圖片僅供參考，請參閲產品詳細資訊及規格
小計（1 卷，共 3000 件）*
TWD50,700.00
(不含稅)
TWD53,220.00
(含稅)
訂單超過 $1,300.00 免費送貨
暫時缺貨
- 從 2026年6月29日 發貨
**需要更多嗎？**輸入您需要的數量，然後按一下「查看送貨日期」以查詢更多庫存和送貨詳細資訊。
單位 | 每單位 | 每卷* |
|---|---|---|
| 3000 + | TWD16.90 | TWD50,700.00 |
* 參考價格
- RS庫存編號:
- 653-188
- 製造零件編號:
- SQS201CENW-T1_GE3
- 製造商:
- Vishay
規格
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法例與合規
產品詳細資訊
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選取全部 | 屬性 | 值 |
|---|---|---|
| 品牌 | Vishay | |
| Product Type | Single MOSFETs | |
| Channel Type | Type P | |
| Maximum Continuous Drain Current Id | -16A | |
| Maximum Drain Source Voltage Vds | 100V | |
| Package Type | PowerPAK | |
| Series | SQS201CENW | |
| Mount Type | PCB | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance Rds | 0.0800Ω | |
| Channel Mode | Enhancement | |
| Forward Voltage Vf | -1.2V | |
| Minimum Operating Temperature | -55°C | |
| Maximum Gate Source Voltage Vgs | ±20 V | |
| Typical Gate Charge Qg @ Vgs | 26nC | |
| Maximum Power Dissipation Pd | 62.5W | |
| Maximum Operating Temperature | 175°C | |
| Height | 0.41mm | |
| Width | 3.30 mm | |
| Standards/Approvals | AEC-Q101 | |
| Length | 3.30mm | |
| Automotive Standard | AEC-Q101 | |
| 選取全部 | ||
|---|---|---|
品牌 Vishay | ||
Product Type Single MOSFETs | ||
Channel Type Type P | ||
Maximum Continuous Drain Current Id -16A | ||
Maximum Drain Source Voltage Vds 100V | ||
Package Type PowerPAK | ||
Series SQS201CENW | ||
Mount Type PCB | ||
Pin Count 8 | ||
Maximum Drain Source Resistance Rds 0.0800Ω | ||
Channel Mode Enhancement | ||
Forward Voltage Vf -1.2V | ||
Minimum Operating Temperature -55°C | ||
Maximum Gate Source Voltage Vgs ±20 V | ||
Typical Gate Charge Qg @ Vgs 26nC | ||
Maximum Power Dissipation Pd 62.5W | ||
Maximum Operating Temperature 175°C | ||
Height 0.41mm | ||
Width 3.30 mm | ||
Standards/Approvals AEC-Q101 | ||
Length 3.30mm | ||
Automotive Standard AEC-Q101 | ||
- COO (Country of Origin):
- CN
The Vishay automotive-grade P-channel MOSFET designed for high-efficiency switching in demanding environments. It supports up to 100 V drain-source voltage and operates reliably at junction temperatures up to 175 °C. Packaged in PowerPAK 1212-8W, it utilizes TrenchFET technology for optimized electrical and thermal performance.
AEC Q101 qualified
Pb Free
Halogen free
RoHS compliant
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