Vishay SQS201CENW Type P-Channel Single MOSFETs, -16 A, -100 V Enhancement, 8-Pin PowerPAK
- RS庫存編號:
- 653-189
- 製造零件編號:
- SQS201CENW-T1_GE3
- 製造商:
- Vishay
此圖片僅供參考,請參閲產品詳細資訊及規格
小計(1 組,共 1 件)*
TWD30.00
(不含稅)
TWD31.50
(含稅)
訂單超過 $1,300.00 免費送貨
有庫存
- 加上 1,375 件從 2026年8月10日 起發貨
- 加上 3,000 件從 2026年9月25日 起發貨
**需要更多嗎?**輸入您需要的數量,然後按一下「查看送貨日期」以查詢更多庫存和送貨詳細資訊。
膠帶 | 每膠帶 |
|---|---|
| 1 + | TWD30.00 |
* 參考價格
- RS庫存編號:
- 653-189
- 製造零件編號:
- SQS201CENW-T1_GE3
- 製造商:
- Vishay
規格
產品概覽和技術數據資料表
法例與合規
產品詳細資訊
透過選取一個或多個屬性來查找類似產品。
選取全部 | 屬性 | 值 |
|---|---|---|
| 品牌 | Vishay | |
| Product Type | Single MOSFETs | |
| Channel Type | Type P | |
| Maximum Continuous Drain Current Id | -16A | |
| Maximum Drain Source Voltage Vds | -100V | |
| Series | SQS201CENW | |
| Package Type | PowerPAK | |
| Mount Type | PCB | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance Rds | 0.0800Ω | |
| Channel Mode | Enhancement | |
| Maximum Gate Source Voltage Vgs | 20V | |
| Typical Gate Charge Qg @ Vgs | 26nC | |
| Minimum Operating Temperature | -55°C | |
| Maximum Power Dissipation Pd | 62.5W | |
| Forward Voltage Vf | -1.1V | |
| Maximum Operating Temperature | 175°C | |
| Height | 0.41mm | |
| Length | 3.30mm | |
| Standards/Approvals | RoHS | |
| Width | 3.30mm | |
| Automotive Standard | AEC-Q101 | |
| 選取全部 | ||
|---|---|---|
品牌 Vishay | ||
Product Type Single MOSFETs | ||
Channel Type Type P | ||
Maximum Continuous Drain Current Id -16A | ||
Maximum Drain Source Voltage Vds -100V | ||
Series SQS201CENW | ||
Package Type PowerPAK | ||
Mount Type PCB | ||
Pin Count 8 | ||
Maximum Drain Source Resistance Rds 0.0800Ω | ||
Channel Mode Enhancement | ||
Maximum Gate Source Voltage Vgs 20V | ||
Typical Gate Charge Qg @ Vgs 26nC | ||
Minimum Operating Temperature -55°C | ||
Maximum Power Dissipation Pd 62.5W | ||
Forward Voltage Vf -1.1V | ||
Maximum Operating Temperature 175°C | ||
Height 0.41mm | ||
Length 3.30mm | ||
Standards/Approvals RoHS | ||
Width 3.30mm | ||
Automotive Standard AEC-Q101 | ||
- COO (Country of Origin):
- CN
Vishay SQS201CENW Series Single MOSFETs, 100V Maximum Drain Source Voltage, 16A Maximum Continuous Drain Current - SQS201CENW-T1_GE3
This single MOSFETs device is a P‑channel enhancement MOSFET designed for power switching in demanding electronic systems. It operates over a broad ambient range and is suitable for PCB mounting in environments requiring high drain voltage capability and significant continuous current handling.
Features and Benefits:
• 100V drain withstand for high-voltage switching capability
• 16A continuous current for heavy-load conduction
• 62.5W power dissipation enables sustained power handling
• 0.0800Ω low Rds(on) reduces conduction losses
• 26nC typical gate charge for efficient switching control
• ±20V gate tolerance supports robust drive signalling
• 16A continuous current for heavy-load conduction
• 62.5W power dissipation enables sustained power handling
• 0.0800Ω low Rds(on) reduces conduction losses
• 26nC typical gate charge for efficient switching control
• ±20V gate tolerance supports robust drive signalling
Applications
• Suitable for high-voltage load switching in automotive electronics
• Ideal for reverse-polarity protection circuits in power rails
• Used with DC-DC converters requiring low conduction loss
• Can be used for motor driver high-side switching stages
• Appropriate for telematics and control modules in harsh climates
• Ideal for reverse-polarity protection circuits in power rails
• Used with DC-DC converters requiring low conduction loss
• Can be used for motor driver high-side switching stages
• Appropriate for telematics and control modules in harsh climates
What thermal extremes can the device tolerate during operation?
It is rated to operate from -55°C up to 175°C, allowing use in wide-temperature environments.
What package style and mounting method does it use for PCB assembly?
It is supplied in a PowerPAK 8‑pin package designed for direct PCB mounting to improve thermal performance.
How does the device support automotive applications?
It meets AEC‑Q101 requirements, making it suitable for vehicle electronic systems that need automotive‑grade components.
What gate drive considerations should be observed for reliable switching?
The gate can accept up to 20V relative to source and the typical gate charge is 26nC, which informs driver sizing and switching-loss calculations.
相關連結
- Vishay SQS201CENW Type P-Channel Single MOSFETs 100 V Enhancement, 8-Pin PowerPAK SQS201CENW-T1_GE3
- Vishay SQJ443 Type P-Channel Single MOSFETs -40 V Enhancement, 4-Pin PowerPAK
- Vishay SQJ141ELP Type P-Channel Single MOSFETs -40 V Enhancement, 4-Pin PowerPAK
- Vishay SQJA61EP Type P-Channel Single MOSFETs 60 V Enhancement, 4-Pin PowerPAK
- Vishay SQ3419CEV Type P-Channel Single MOSFETs -40 V Enhancement, 6-Pin PowerPAK
- Vishay SQJ131ELP Type P-Channel Single MOSFETs -30 V Enhancement, 4-Pin PowerPAK
- Vishay SQJA61EP Type P-Channel Single MOSFETs 60 V Enhancement, 4-Pin PowerPAK SQJA61EP-T1_GE3
- Vishay SQJ443 Type P-Channel Single MOSFETs -40 V Enhancement, 4-Pin PowerPAK SQJ443AEP-T1_GE3
