Vishay TrenchFET P-Channel Automotive MOSFET, 47 A, 30 V MOSFET, 8-Pin PowerPAK 1212-8SLW SQS135ELNW-T1_GE3
- RS庫存編號:
- 790-427
- 製造零件編號:
- SQS135ELNW-T1_GE3
- 製造商:
- Vishay
N
此圖片僅供參考，請參閲產品詳細資訊及規格
可享批量折扣
查看批量定價選項小計（1 組，共 50 件）*
TWD15.00
(不含稅)
TWD16.00
(含稅)
庫存資訊目前無法存取 - 請稍後再回來查看
單位 | 每單位 | 每膠帶* |
|---|---|---|
| 50 - 1200 | TWD0.30 | TWD15.00 |
| 1250 - 4950 | TWD0.20 | TWD10.00 |
| 5000 + | TWD0.10 | TWD5.00 |
* 參考價格
- RS庫存編號:
- 790-427
- 製造零件編號:
- SQS135ELNW-T1_GE3
- 製造商:
- Vishay
規格
產品概覽和技術數據資料表
法例與合規
產品詳細資訊
透過選取一個或多個屬性來查找類似產品。
選取全部 | 屬性 | 值 |
|---|---|---|
| 品牌 | Vishay | |
| Channel Type | P-Channel | |
| Product Type | Automotive MOSFET | |
| Maximum Continuous Drain Current Id | 47A | |
| Maximum Drain Source Voltage Vds | 30V | |
| Package Type | PowerPAK 1212-8SLW | |
| Series | TrenchFET | |
| Mount Type | Surface | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance Rds | 0.0205Ω | |
| Channel Mode | MOSFET | |
| Maximum Gate Source Voltage Vgs | 20V | |
| Minimum Operating Temperature | -55°C | |
| Forward Voltage Vf | 1.2V | |
| Typical Gate Charge Qg @ Vgs | 29nC | |
| Maximum Power Dissipation Pd | 84W | |
| Maximum Operating Temperature | 175°C | |
| Standards/Approvals | AEC-Q101 | |
| Automotive Standard | AEC-Q101 | |
| 選取全部 | ||
|---|---|---|
品牌 Vishay | ||
Channel Type P-Channel | ||
Product Type Automotive MOSFET | ||
Maximum Continuous Drain Current Id 47A | ||
Maximum Drain Source Voltage Vds 30V | ||
Package Type PowerPAK 1212-8SLW | ||
Series TrenchFET | ||
Mount Type Surface | ||
Pin Count 8 | ||
Maximum Drain Source Resistance Rds 0.0205Ω | ||
Channel Mode MOSFET | ||
Maximum Gate Source Voltage Vgs 20V | ||
Minimum Operating Temperature -55°C | ||
Forward Voltage Vf 1.2V | ||
Typical Gate Charge Qg @ Vgs 29nC | ||
Maximum Power Dissipation Pd 84W | ||
Maximum Operating Temperature 175°C | ||
Standards/Approvals AEC-Q101 | ||
Automotive Standard AEC-Q101 | ||
- COO (Country of Origin):
- CN
The Vishay Power MOSFET offers robust performance and reliability in automotive applications, featuring a P-Channel design with a 30 V (D-S) rating and operating temperatures up to 175 °C, ensuring superior thermal management.
TrenchFET Gen IV technology enhances efficiency and reliability
AEC Q101 qualified for automotive applications
100% R and UIS tested for guaranteed performance
Wettable flank terminals improve PCB mounting reliability
相關連結
- Vishay TrenchFET N channel-Channel MOSFET 40 V Enhancement, 8-Pin PowerPAK 1212-8SLW SQS136ENW-T1_GE3
- Vishay TrenchFET N channel-Channel MOSFET 40 V Enhancement, 8-Pin PowerPAK 1212-8SLW SQS136ELNW-T1_GE3
- Vishay Type N-Channel MOSFET 40 V Depletion, 8-Pin PowerPAK 1212-8SLW SQS140ENW-T1_GE3
- Vishay Type N-Channel MOSFET -40 V Enhancement, 8-Pin PowerPAK 1212-8SLW SQS142ELNW-T1_GE3
- Vishay Type N-Channel MOSFET -40 V Enhancement, 8-Pin PowerPAK 1212-8SLW SQS141ELNW-T1_GE3
- Vishay SQS Type N-Channel MOSFET 40 V Enhancement, 8-Pin PowerPAK 1212-8SLW SQS140ELNW-T1_GE3
- Vishay Type N-Channel MOSFET 40 V Depletion, 8-Pin PowerPAK 1212-8SLW
- Vishay Type N-Channel MOSFET -40 V Enhancement, 8-Pin PowerPAK 1212-8SLW